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AS29LV400T-120BI 参数 Datasheet PDF下载

AS29LV400T-120BI图片预览
型号: AS29LV400T-120BI
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 256KX16, 120ns, PBGA48, 6 X 8 MM, 1.20 MM HEIGHT, BGA-48]
分类和应用: 内存集成电路
文件页数/大小: 27 页 / 282 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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• Organization: 512Kx8/256Kx16
• Sector architecture
- One 16K; two 8K; one 32K; and seven 64K byte sectors
- One 8K; two 4K; one 16K; and seven 32K word sectors
- Boot code sector architecture—T (top) or B (bottom)
- Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm
- Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm
- Automatically preprograms/erases chip or specified
sectors
• Hardware
RE S E T
pin
- Resets internal state machine to read mode
• Low power consumption
- 200 nA typical automatic sleep mode current
- 200 nA typical standby current
- 10 mA typical read current
• JEDEC standard software, packages and pinouts
- 48-pin TSOP
- 44-pin SO; availability TBD
- 48-pin BGA
• Detection of program/erase cycle completion
- DQ7
DATA
polling
- DQ6 toggle bit
- DQ2 toggle bit
- RY/
B Y
output
• Erase suspend/resume
- Supports reading data from or programming data
to a sector not being erased
• Low V
CC
write lock-out below 1.5V
• 10 year data retention at 150C
• 100,000 write/erase cycle endurance
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RY/BY
V
CC
V
SS
Sector protect/
erase voltage
switches
Erase voltage
generator
Program/erase
control
Command
register
Program voltage
generator
Chip enable
Output enable
Logic
STB
Data latch
DQ0–DQ15
RESET
WE
BYTE
Input/output
buffers
CE
OE
A-1
V
CC
detector
Timer
Address latch
STB
Y decoder
Y gating
X decoder
Cell matrix
A0–A17
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29LV400-70
Maximum access time
Maximum chip enable access time
Maximum output enable access time
t
AA
t
CE
t
OE
70
70
30
29LV400-80
80
80
30
29LV400-90
90
90
35
29LV400-120
120
120
50
Unit
ns
ns
ns
8/9/01; V.0.9.9.1
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