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    AS29F200B-120SI 参数 Datasheet PDF下载

    AS29F200B-120SI图片预览
    型号： AS29F200B-120SI
    PDF下载： 下载PDF文件 查看货源
    内容描述： 5V 256K ×8 / 128K ×8 CMOS FLASH EEPROM [5V 256K x 8/128K x 8 CMOS FLASH EEPROM]
    分类和应用： 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
    文件页数/大小： 20 页 / 357 K
    品牌： ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
     浏览型号AS29F200B-120SI的Datasheet PDF文件第12页浏览型号AS29F200B-120SI的Datasheet PDF文件第13页浏览型号AS29F200B-120SI的Datasheet PDF文件第14页浏览型号AS29F200B-120SI的Datasheet PDF文件第15页浏览型号AS29F200B-120SI的Datasheet PDF文件第16页浏览型号AS29F200B-120SI的Datasheet PDF文件第17页浏览型号AS29F200B-120SI的Datasheet PDF文件第19页浏览型号AS29F200B-120SI的Datasheet PDF文件第20页  
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    Symbol  
    Parameter  
    Test setup  
    Typ  
    6
    Max  
    7.5  
    12  
    Unit  
    pF  
    C
    Input capacitance  
    V
    IN = 0  
    OUT = 0  
    IN = 0  
    IN  
    COUT  
    Output capacitance  
    Control pin capacitance  
    V
    8.5  
    8
    pF  
    C
    V
    10  
    µF  
    IN2  
    62#SLQ#FDSDFLWDQFH  
    Symbol  
    Parameter  
    Test setup  
    IN = 0  
    OUT = 0  
    IN = 0  
    Typ  
    6
    Max  
    7.5  
    12  
    Unit  
    pF  
    C
    Input capacitance  
    V
    IN  
    COUT  
    Output capacitance  
    Control pin capacitance  
    V
    8.5  
    8
    pF  
    C
    V
    10  
    µF  
    IN2  
    'DWD#UHWHQWLRQ  
    Temp.  
    (°C)  
    Parameter  
    Min  
    10  
    Unit  
    years  
    years  
    150°  
    125°  
    Minimum pattern data retention time  
    20  
    4;  
    $//,$1&(#6(0,&21'8&725  
    ','#4407333<0$1#72:233  

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