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    AS29F200B-120SI 参数 Datasheet PDF下载

    AS29F200B-120SI图片预览
    型号： AS29F200B-120SI
    PDF下载： 下载PDF文件 查看货源
    内容描述： 5V 256K ×8 / 128K ×8 CMOS FLASH EEPROM [5V 256K x 8/128K x 8 CMOS FLASH EEPROM]
    分类和应用： 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
    文件页数/大小： 20 页 / 357 K
    品牌： ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
     浏览型号AS29F200B-120SI的Datasheet PDF文件第12页浏览型号AS29F200B-120SI的Datasheet PDF文件第13页浏览型号AS29F200B-120SI的Datasheet PDF文件第14页浏览型号AS29F200B-120SI的Datasheet PDF文件第15页浏览型号AS29F200B-120SI的Datasheet PDF文件第17页浏览型号AS29F200B-120SI的Datasheet PDF文件第18页浏览型号AS29F200B-120SI的Datasheet PDF文件第19页浏览型号AS29F200B-120SI的Datasheet PDF文件第20页  
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    3UHOLPLQDU\#LQIRUPDWLRQ  
    ®
    '$7$#SROOLQJ#ZDYHIRUP  
    tCH  
    CE  
    tDF  
    tOE  
    OE  
    tOEH  
    WE  
    tCE  
    tOH  
    Output  
    High Z  
    DQ7  
    Input DQ7  
    Output DQ7  
    tWHWH1 or 2  
    7RJJOH#ELW#ZDYHIRUP  
    CE  
    tOEH  
    WE  
    OE  
    DQ6  
    tDH  
    tOE  
    (UDVH#DQG#SURJUDPPLQJ#SHUIRUPDQFH  
    Limits  
    Parameter  
    Min  
    Typical  
    1.6  
    60  
    Max  
    Unit  
    sec  
    Sector erase and verify-1 time (excludes 00h programming prior to erase)  
    Word programming time  
    -
    -
    -
    -
    µs  
    Byte program time  
    -
    -
    -
    60  
    -
    -
    µs  
    Chip programming time  
    7.5  
    -
    sec  
    Erase/ program cycles  
    10,000  
    cycles  
    49  
    $//,$1&(#6(0,&21'8&725  
    ','#4407333<0$1#72:233  

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