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AS29F010-120LC 参数 Datasheet PDF下载

AS29F010-120LC图片预览
型号: AS29F010-120LC
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 128K ×8 CMOS FLASH EEPROM [5V 128K x 8 CMOS FLASH EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 10 页 / 169 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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Mode  
CE  
L
OE  
L
WE  
H
A0  
A0  
X
A9  
A9  
X
DQ  
Read  
DOUT  
High Z  
High Z  
52h  
Output disable  
Standby  
L
H
H
L
H
H
L
H
X
X
Mfr. code  
Device code  
H
L
Vh  
Vh  
A9  
L
L
H
H
CODE (03h,04h,06h)  
DIN  
Write command  
L
H
L
A0  
Key: L =Low (<VIL); H = High (>VIH); Vh = 11.5–12.5V; X =Dont care  
Read mode: Selected with CE and OE low, WE high. Data is valid tAA after addresses are stable, tCE after CE is low and tOE after OE is low.  
Output disable: Part remains powered up; but outputs disabled with OE pulled high.  
Standby: Part is powered down, and ICC reduced to 1.5 mA for TTL input levels (<1.0 mA for CMOS input levels).  
Mfr. (manufacturer) code, Device code: Selected by A9 = 11.5–12.5V. When CE and OE are pulled low the outputs are enabled and a data byte is read out.  
When A0 is pulled low the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products. When A0 is high DOUT = 03h,04h, 06h, the  
Alliance device codes for the AS29F010.  
Write command: Selected by CE and WE pulled low, OE pulled high. Initiates command mode in the WSM and latches addresses and data into the chip. Once  
a write command starts, the WSM stays in command mode until the command is completed or it times out. Addresses are latched on the falling edge of WE  
and CE, whichever occurs later; data is latched on the rising edge o WE and CE, whichever occurs first. The WE signal is filtered to prevent spurious events  
from being detected as write commands.  
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All commands require four bus write cycles to execute. After four write cycles the command is executed until terminated by the i nternal  
timer. For verify commands a read operation after Write[4] in a write command bus cycle reads out the data from thearray. For manufacturer  
and device code commands the ID code is read out. For other operations a read operation reads out a status byte on the outputs.  
Address in  
5555h  
Data in  
AAh  
Bus write[1]  
Bus write[2]  
Bus write[3]  
Bus write[4]  
Bus read  
2AAAh  
55h  
Command timeout: For each operation the address and data are latched at  
5555h  
Command code  
Data in  
DOUT  
bus Write and held until the operation completes and times-out. After  
[4]  
time-out the WSM returns the AS29F010 to normal mode. Each individual  
operation requires the 4-cycle write command sequence to execute. The  
AS29F010 does not remain in command mode after time-out. When a  
command times-out only the error flag is not reset.  
Address in  
Address in  
Errors and timeout: Any of the following conditions sets the error flag.  
Any write command which does not match the sequence above for Write . Write , and Write .  
{1] {2] [3]  
Any write cycle that follows more than 150 µs after the previous write cycle.  
The command Data in Write has more than one bit set high. This indicates conflicting commands.  
[3]  
[3]  
V
drops below V  
during command execution.  
CC  
LKO  
Once the error flag is set, the AS29F010 times out and returns to normal Readmode. The error flag remains until it is cleared by a reset  
command. The error flag can be read by executing a status command and reading the status byte.  
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The Command Code table displays the bus cycles required for each command mode. Read delay is the minimum delay after Write [4] during  
a write command bus cycle before a valid read may be executed. Timeout indicates the maximum delay before the WSM returns the  
AS29F010 to normal mode. Erase has a longer timeout than the other modes. Status byte can be read almost immediately after a Write[4], but  
the verify commands require a 25 µs delay to read valid data.  
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