AS29F010
AS29F011
(V = 5.0±0.5V, GND = 0V, T = 0°C to +70°C
DC ELECTRICAL CHARACTERISTICS
CC
a
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input load current
I
I
I
I
I
I
I
I
-
±1
±1
100
30
50
1.5
1.0
2
µA
µA
mA
mA
mA
mA
mA
µA
V
LI
Output leakage current
-
LO
Output short circuit current
Active current, read @ 6MHz
Active current, program/erase
V
= 0.5V
OUT
-
OS
CE = V , OE = V
-
CC
IL
IH
IH
CE = V , OE = V
-
CCPRG
SB1
SB2
CCPD
IL
I
CE = V
CE = V
-
CC
IH
-
CC
RP = 0V
-
Input: low level
Input: high level
Output low voltage
Output high level
V
V
V
V
V
V
V
0.8
-
-
IL
2
V
IH
I
I
I
= 12mA
-
0.45
-
V
OL
OL
OH
OH
= -2.5 mA
= -100 µA
2.4
V
OH1
OH2
LKO
HH
V
- 0.4
-
V
CC
Low V lock out voltage
3.2
-
V
CC
Input HV select voltage
11.5
12.5
V
Notes:
• Not more than one output tested simultaneously. Duration of the short circuit must not be >1 second. V
= 0.5V was selected to avoid
OUT
test problems caused by tester ground degradation. (This parameter is sampled and not 100% tested, but guaranteed by characterization.)
• The I current listed includes both the DC operating current and the frequency dependent component (@ 6 MHz). The frequency com-
CC
ponent typically is less than 2 mA/MHz with OE at V
.
IH
• I active while program or erase operations are in progress.
CC
6
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
