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AS29CF160B-55TIN 参数 Datasheet PDF下载

AS29CF160B-55TIN图片预览
型号: AS29CF160B-55TIN
PDF下载: 下载PDF文件 查看货源
内容描述: [2M X 8 Bit / 1M X 16 Bit CMOS 5.0 Volt-only]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 41 页 / 835 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS29CF160T-55TIN  
AS29CF160B-55TIN  
Table 9. AS29CF160T/B-55TIN Command Definitions  
Bus Cycles (Notes 2 - 4)  
Third Fourth  
Addr Data Addr Data Addr Data  
Command  
Sequence  
(Note 1)  
First  
Second  
Fifth  
Sixth  
Addr Data  
Addr Data Addr Data  
Read (Notes 5, 6)  
Reset (Note 6)  
1
1
RA  
XXX  
555  
AAA  
555  
AAA  
555  
AAA  
555  
RD  
F0  
Word  
Byte  
Word  
Byte  
Word  
Byte  
Word  
Byte  
2AA  
555  
2AA  
555  
2AA  
555  
2AA  
555  
555  
AAA  
555  
AAA  
555  
AAA  
555  
Manufacturer ID  
4
4
4
4
AA  
AA  
AA  
AA  
55  
55  
55  
55  
90 X00  
X01 22D2  
X02 D2  
X01 22D8  
01  
Device ID,  
Top Boot Block  
Device ID,  
Bottom Boot Block  
90  
90  
90  
X02  
X03  
X06  
D8  
Continuation ID  
7F  
AAA  
AAA  
XX00  
XX01  
00  
(SA)  
X02  
Word  
555  
2AA  
555  
555  
Sector Protect Verify  
(Note 8)  
AA  
55  
90  
4
(SA)  
X04  
Byte  
AAA  
AAA  
01  
Word  
Byte  
Word  
Byte  
Word  
Byte  
55  
AA  
555  
AAA  
555  
AAA  
CFI Query (Note 9)  
Program  
1
4
3
98  
AA  
AA  
2AA  
555  
2AA  
555  
555  
AAA  
555  
55  
55  
A0  
20  
PA  
PD  
Unlock Bypass  
AAA  
Unlock Bypass Program  
(Note 10)  
Unlock Bypass Reset (Note 11)  
2
2
6
XXX  
A0  
90  
PA  
PD  
00  
55  
XXX  
555  
AAA  
555  
AAA  
XXX  
XXX  
XXX  
2AA  
555  
2AA  
555  
Word  
555  
AAA  
555  
555  
AAA  
555  
2AA  
555  
2AA  
555  
555  
10  
80  
80  
AA  
AA  
55  
55  
Chip Erase  
AA  
Byte  
Word  
Byte  
AAA  
55  
SA  
30  
Sector Erase  
6
AA  
AAA  
AAA  
Erase Suspend (Note 12)  
Erase Resume (Note 13)  
1
1
B0  
30  
Legend:  
X = Don't care  
RA = Address of the memory location to be read.  
RD = Data read from location RA during read operation.  
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the  
whichever happens later.  
or  
pulse,  
WE  
CE  
PD = Data to be programmed at location PA. Data latches on the rising edge of  
or  
pulse, whichever happens first.  
CE  
WE  
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A19 - A12 select a unique sector.  
Note:  
1. See Table 1 for description of bus operations.  
2. All values are in hexadecimal.  
3. Except when reading array or autoselect data, all bus cycles are write operation.  
4. Address bits A19 - A11 are don't cares for unlock and command cycles, unless SA or PA required.  
5. No unlock or command cycles required when reading array data.  
6. The Reset command is required to return to reading array data when device is in the autoselect mode, or if I/O5 goes high  
(while the device is providing status data).  
7. The fourth cycle of the autoselect command sequence is a read cycle.  
8. The data is 00h for an unprotected sector and 01h for a protected sector. See "Autoselect Command Sequence" for more  
information.  
9. Command is valid when device is ready to read array data or when device is in autoselect mode.  
10. The Unlock Bypass command is required prior to the Unlock Bypass Program command.  
11. The Unlock Bypass Reset command is required to return to reading array data when the device is in the Unlock Bypass  
mode.  
12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode.  
13. The Erase Resume command is valid only during the Erase Suspend mode.  
Confidential  
- 18 of 41 -  
Rev.1.0 July 2019  
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