TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
HIGH LEVEL OUTPUT CONDUCTANCE
vs. GATE THRESHOLD VOLTAGE
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
0.44
0.42
0.44
0.42
T = + 25°C
A
V = V
GS DS
V
= V
DS
= 1µA
GS
I
DS
I
= 1mA
DS
0.40
0.38
0.40
0.38
0.36
0.34
0.36
0.34
-50
-25
+100 +125
0
+25
+50
+75
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
AMBIENT TEMPERATURE - T (°C)
A
GATE THRESHOLD VOLTAGE - V (V)
t
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
LOW LEVEL OUTPUT CONDUCTANCE
vs. GATE THRESHOLD VOLTAGE
0.36
0.35
0.44
0.42
T
= + 25°C
= V
A
V
GS
= 1µA
DS
DS
V = 2.3V to 2.8V
t
DS
I
I
= 1mA
0.40
0.38
0.34
0.33
0.32
0.31
0.36
0.34
-50
-25
0
+25
+50
+75
+100 +125
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
AMBIENT TEMPERATURE - T (°C)
A
GATE THRESHOLD VOLTAGE - V (V)
t
LOW LEVEL OUTPUT TRANSCONDUCTANCE
vs. AMBIENT TEMPERATURE
120
TRANSCONDUCTANCE vs.
GATE THRESHOLD VOLTAGE
89
T
V
= + 25°C
= V
DS
A
110
GS
= 1µA to 10µA
88
87
I
V = 2.3V to 2.8V
t
DS
I
= 1µA to 10µA
DS
100
90
86
85
80
70
84
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
-50
-25
0
+25
+50
+75 +100 +125
GATE THRESHOLD VOLTAGE - V (V)
t
AMBIENT TEMPERATURE - T (°C)
A
ALD810023, ALD810024, ALD810025,
ALD810026, ALD810027, ALD810028
Advanced Linear Devices, Inc.
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