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ALD810023 参数 Datasheet PDF下载

ALD810023图片预览
型号: ALD810023
PDF下载: 下载PDF文件 查看货源
内容描述: QUAD超级电容器自动平衡( SABA ?? ¢ ) MOSFET阵列 [QUAD SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY]
分类和应用: 电容器局域网
文件页数/大小: 17 页 / 523 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
 浏览型号ALD810023的Datasheet PDF文件第5页浏览型号ALD810023的Datasheet PDF文件第6页浏览型号ALD810023的Datasheet PDF文件第7页浏览型号ALD810023的Datasheet PDF文件第8页浏览型号ALD810023的Datasheet PDF文件第10页浏览型号ALD810023的Datasheet PDF文件第11页浏览型号ALD810023的Datasheet PDF文件第12页浏览型号ALD810023的Datasheet PDF文件第13页  
ABSOLUTE MAXIMUM RATINGS  
V+ to V- voltage  
Drain-Source voltage, V  
Gate-Source voltage, V  
Operating Current  
Power dissipation  
15.0V  
10.6V  
10.6V  
80mA  
500mW  
DS  
GS  
Operating temperature range SCL  
Storage temperature range  
Lead temperature, 10 seconds  
0°C to +70°C  
-65°C to +150°C  
+260°C  
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.  
OPERATING ELECTRICAL CHARACTERISTICS  
+
-
V = +5V V = GND T = 25°C unless otherwise specified  
A
ALD810023  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
Gate Threshold Voltage  
Offset Voltage  
V
V
2.28  
2.30  
5
2.32  
20  
V
V
V
V
V
V
=V I  
DS; DS(ON)  
=1µA  
=1µA  
t
GS  
mV  
- V or V - V  
t2 t3  
OS  
t1  
t4  
t4  
Offset Voltage Tempco  
Gate Threshold Voltage Tempco  
TC  
TC  
5
µV/C  
mV/C  
- V or V - V  
t2 t3  
VOS  
Vt  
t1  
-2.2  
=V  
=V  
I
DS; DS(ON)  
GS  
GS  
Drain Source On Current  
Drain Source On Resistance  
I
R
0.0001  
19000  
µA  
MΩ  
=1.90V  
=2.00V  
=2.10V  
=2.20V  
=2.30V  
=2.40V  
=2.54V  
=2.64V  
=2.82V  
=3.12V  
=3.72V  
DS(ON)  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DS(ON)  
Drain Source On Current  
Drain Source On Resistance  
I
R
0.001  
2000  
µA  
MΩ  
V
V
V
V
V
V
V
V
V
V
=V  
=V  
=V  
=V  
=V  
=V  
=V  
=V  
=V  
=V  
DS(ON)  
GS  
GS  
GS  
GS  
GS  
GS  
GS  
GS  
GS  
GS  
DS(ON)  
Drain Source On Current  
Drain Source On Resistance  
I
R
0.01  
210  
µA  
MΩ  
DS(ON)  
DS(ON)  
Drain Source On Current  
Drain Source On Resistance  
I
R
0.1  
22  
µA  
MΩ  
DS(ON)  
DS(ON)  
Drain Source On Current  
Drain Source On Resistance  
I
R
1
µA  
MΩ  
DS(ON)  
DS(ON)  
2.3  
Drain Source On Current  
Drain Source On Resistance  
I
R
10  
µA  
MΩ  
DS(ON)  
DS(ON)  
0.24  
Drain Source On Current  
Drain Source On Resistance  
I
R
100  
µA  
MΩ  
DS(ON)  
DS(ON)  
0.025  
Drain Source On Current  
Drain Source On Resistance  
I
R
300  
µA  
MΩ  
DS(ON)  
DS(ON)  
0.009  
Drain Source On Current  
Drain Source On Resistance  
I
R
1000  
µA  
MΩ  
DS(ON)  
DS(ON)  
0.003  
Drain Source On Current  
Drain Source On Resistance  
I
R
3000  
µA  
MΩ  
DS(ON)  
DS(ON)  
0.001  
Drain Source On Current  
Drain Source On Resistance  
I
R
10000  
µA  
MΩ  
DS(ON)  
DS(ON)  
0.0004  
Drain Source Breakdown Voltage  
Drain Source Leakage Current1  
BV  
I
10.6  
V
DSX  
10  
5
400  
4
pA  
nA  
V
V
=V  
=V  
= +125°C  
=V - 1.0  
t
t
DS (OFF)  
GS  
GS  
DS  
DS  
=V - 1.0,  
T
A
Gate Leakage Current1  
I
200  
1
pA  
nA  
V
V
=5.0V, V  
=0V  
=0V,  
GSS  
GS  
DS  
DS  
=5.0V, V  
GS  
= +125°C  
T
A
Input Capacitance  
Turn-on Delay Time  
Turn-off Delay Time  
C
15  
pF  
V
=0V, V  
=5.0V  
DS  
ISS  
GS  
t
t
on  
off  
10  
10  
60  
ns  
ns  
dB  
Crosstalk  
f = 100KHz  
ALD810023, ALD810024, ALD810025,  
ALD810026, ALD810027, ALD810028  
Advanced Linear Devices, Inc.  
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