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ALD810023 参数 Datasheet PDF下载

ALD810023图片预览
型号: ALD810023
PDF下载: 下载PDF文件 查看货源
内容描述: QUAD超级电容器自动平衡( SABA ?? ¢ ) MOSFET阵列 [QUAD SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY]
分类和应用: 电容器局域网
文件页数/大小: 17 页 / 523 K
品牌: ALD [ ADVANCED LINEAR DEVICES ]
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TM  
A
L
D
DVANCED  
INEAR  
EVICES, INC.  
®
e
EPAD  
A
ALD810023/ALD810024/ALD810025/  
ALD810026/ALD810027/ALD810028  
QUAD SUPERCAPACITOR AUTO BALANCING (SAB) MOSFET ARRAY  
GENERAL DESCRIPTION  
FEATURES & BENEFITS  
TheALD8100xx andALD9100xx family of SupercapacitorAuto Balancing  
MOSFETs, or SAB™ MOSFETs, are EPAD® MOSFETs designed to  
address leakage balance of supercapacitors connected in series.  
Supercapacitors, also known as ultracapacitors or supercaps, when con-  
nected two in series, can be balanced with an ALD9100xx dual package.  
Supercaps connected two, three or four in series can be balanced with an  
ALD8100xx quad package.  
• Simple and economical to use  
• Precision factory trimmed  
• Automatically regulates and balances leakage currents  
• Effective for supercapacitor charge-balancing  
• Balances up to 4 supercaps with a single IC package  
• Balances 2-cell, 3-cell, 4-cell series-connected supercaps  
• Scalable to larger supercap stacks and arrays  
• Near zero additional leakage currents  
ALD SAB MOSFETs have unique electrical characteristics for active con-  
tinuous leakage current regulation and self-balancing of stacked series-  
connected supercaps and, at the same time, dissipate near zero leakage  
currents, practically eliminating extra power dissipation. For many  
applications, SAB MOSFET automatic charge balancing offers a simple,  
economical and effective method to balance and regulate supercap  
voltages. With SAB MOSFETs, each supercap in a series-connected stack  
is continuously and automatically controlled for precision effective supercap  
leakage current and voltage balancing.  
• Zero leakage at 0.3V below rated voltages  
• Balances with series-connect and parallel-connect  
• Leakage currents are exponential fuction of cell voltages  
• Active current ranges from < 0.3nA to > 1000µA  
• Always active, always fast response time  
• Minimizes leakage currents and power dissipation  
APPLICATIONS  
SAB MOSFETs offer a superior alternative solution to other passive  
resistor-based or operational amplifier based balancing schemes, which  
typically contribute continuous power dissipation due to linear currents at  
all voltage levels. They are also a preferred alternative to many other  
active supercap charging and balancing regulator ICs where tradeoffs in  
cost, efficiency, complexity and power dissipation are important design  
considerations.  
• Series-connected supercapacitor cell leakage balancing  
• Energy harvesting  
• Zero-power voltage divider at selected voltages  
• Matched current mirrors and current sources  
• Zero-power mode maximum voltage limiter  
• Scaled supercapacitor stacks and arrays  
The SAB MOSFET provides regulation of the voltage across a supercap  
cell by increasing its drain current exponentially across the supercap when  
supercap voltages increase, and by decreasing its drain current  
exponentially across the supercap when supercap voltages decrease.  
When a supercap in a supercap stack is charged to a voltage less than  
90% of the desired voltage limit, the SAB MOSFET across the supercap  
is turned off and there is zero leakage current contribution from the SAB  
MOSFET. On the other hand, when the voltage across the supercap is  
over the desired voltage limit, the SAB MOSFET is turned on to increase  
its drain currents to keep the over-voltage from rising across the supercap.  
However, the voltages and leakages of other supercaps in the stack are  
lowered simultaneously to maintain near-zero net leakage currents.  
PIN CONFIGURATION  
ALD8100xx  
16  
15  
14  
13  
12  
11  
1
2
3
IC*  
IC*  
M1  
M2  
D
D
N1  
N1  
N2  
N2  
The ALD8100xx/ALD9100xx SAB MOSFET family offers the user a se-  
lection of different threshold voltages for various supercap nominal volt-  
age values and desired leakage balancing characteristics. Each SAB  
MOSFET generally requires connecting its V+ pin to the most positive  
voltage and its V- and IC pins to the most negative voltage within the  
package. Note that each Drain pin has an internal reverse biased diode  
to its Source pin, and each Gate pin has a reverse biased diode to V-. All  
other pins must have voltages within V+ and V- voltage limits. Standard  
ESD protection facilities and handling procedures for static sensitive de-  
vices must also be used.  
G
S
G
S
V-  
V-  
N1  
N2  
V+  
4
5
V-  
M3  
V-  
M4  
D
N4  
G
N4  
S
N4  
D
N3  
N3  
N3  
6
7
8
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))  
G
S
10  
9
Operating Temperature Range*  
0°C to +70°C  
V-  
16-Pin SOIC Package  
SCL PACKAGES  
ALD810023SCL  
ALD810024SCL  
ALD810025SCL  
ALD810026SCL  
ALD810027SCL  
ALD810026SCL  
*IC pins are internally connected, connect to V-  
* Contact factory for industrial temp. range or user-specified threshold voltage values.  
©2013 Advanced Linear Devices, Inc., Vers. 1.0  
www.aldinc.com  
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