ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
V
DS
Gate-Source voltage,
V
GS
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
10.6V
10.6V
500 mW
0°C to +70°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND TA = 25
°
C unless otherwise specified
CAUTION:
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALD110808A / ALD110908A
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
Min
0.78
Typ
0.80
Max
0.82
ALD110808/ ALD110908
Min
0.78
Typ
0.80
Max
0.82
Unit
V
Test Condition
IDS =1µA
VDS = 0.1V
IDS=1µA
Offset Voltage
VGS1-VGS2
VGS1-VGS2 Tempco
VOS
1
2
3
10
mV
∆V
OS
5
-1.7
0.0
+1.6
12.0
3.0
5
-1.7
0.0
+1.6
12.0
3.0
µV/ °C
VDS1= VDS2
ID= 1µA
ID= 20µA VDS = 0.1V
ID= 40µA
VGS= +10.3V
VGS= +4.8V
VDS= +5V
VGS = +4.8V
VDS = +9.8V
GateThreshold Tempco
∆V
GS(th)
IDS (ON)
mV/
°C
mA
On Drain Current
Forward Transconductance
GFS
1.4
1.4
mmho
Transconductance Mismatch
Output Conductance
∆G
FS
GOS
1.8
68
1.8
68
%
µmho
VGS =+4.8V
VDS = +9.8V
VDS = 0.1V
VGS = +4.8V
Drain Source On Resistance
RDS (ON)
500
500
Ω
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
1
∆R
DS (ON)
0.5
0.5
%
BVDSX
10
10
V
IDS = 1.0µA
VGS = -0.2V
VGS = -0.2V
VDS =10V, TA = 125°C
VDS = 0V VGS = 10V
TA =125°C
IDS (OFF)
IGSS
10
100
4
30
1
10
100
4
30
1
pA
nA
pA
nA
pF
pF
ns
ns
dB
Gate Leakage Current1
3
3
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Notes:
1
CISS
CRSS
ton
toff
2.5
0.1
10
10
60
2.5
0.1
10
10
60
V+ = 5V RL= 5KΩ
V+ = 5V RL= 5KΩ
f = 100KHz
Consists of junction leakage currents
ALD110808/ALD110808A/ALD110908/ALD110908A
Advanced Linear Devices
2
ALD [ ADVANCED LINEAR DEVICES ]
