A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD110808/ALD110808A/ALD110908/ALD110908A
V
GS(th)
= +0.8V
e
TM
EPAD
E
N
®
AB
LE
D
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/
dual N-Channel MOSFETs matched at the factory using ALD’s proven
EPAD® CMOS technology. These devices are intended for low voltage,
small signal applications.
These MOSFET devices are built on the same monolithic chip, so they
exhibit excellent temperature tracking characteristics. They are versatile
as circuit elements and are useful design component for a broad range of
analog applications. They are basic building blocks for current sources,
differential amplifier input stages, transmission gates, and multiplexer
applications. For most applications, connect V- and N/C pins to the most
negative voltage potential in the system and V+ pin to the most positive
voltage potential (or left open unused). All other pins must have voltages
within these voltage limits.
ALD110808/ALD110908 devices are built for minimum offset voltage and
differential thermal response, and they are suited for switching and ampli-
fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias
current, low input capacitance and fast switching speed are desired. As
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
These devices are suitable for use in precision applications which require
very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect
Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is
specified at 30pA at room temperature. For example, DC beta of the
device at a drain current of 3mA and input leakage current of 30pA at
25°C is = 3mA/30pA = 100,000,000.
FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +0.8V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• V
GS(th)
match to 2mV and 10mV
• High input impedance — 10
12
Ω
typical
• Positive,zero, and negative V
GS(th)
temperature coefficient
• DC current gain >10
8
• Low input and output leakage currents
ORDERING INFORMATION
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
Plastic Dip
Package
ALD110808APC
ALD110808 PC
16-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
8Pin
SOIC
Package
APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stage
• Voltage comparator
• Voltage bias circuits
• Sample and Hold
• Analog inverter
• Level shifters
• Source followers and buffers
• Current multipliers
• Analog switches / multiplexers
PIN CONFIGURATION
ALD110808
N/C*
G
N1
D
N1
S
12
V
-
D
N4
G
N4
N/C*
1
2
3
4
5
6
7
8
V
-
V
-
V
-
M4
M3
M1
M2
V
-
V
-
16
15
14
N/C*
G
N2
D
N2
V
+
S
34
D
N3
G
N3
N/C*
V
+
13
12
11
10
9
PC, SC PACKAGES
ALD110908
V-
V-
N/C*
1
2
3
4
8
7
N/C*
G
N1
D
N1
S
12
G
N2
D
N2
V-
M1
M2
6
V-
5
PA, SA PACKAGES
*N/C pins are internally connected.
Connect to V- to reduce noise
ALD110808ASC ALD110908APA ALD110908ASA
ALD110808SC ALD110908PA ALD110908SA
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.
Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ALD [ ADVANCED LINEAR DEVICES ]
