欢迎访问ic37.com |
会员登录 免费注册
发布采购

AK2572 参数 Datasheet PDF下载

AK2572图片预览
型号: AK2572
PDF下载: 下载PDF文件 查看货源
内容描述: APC为突发模式适用直接调制激光二极管 [APC for Burst Mode Applicable Direct Modulation Laser Diode]
分类和应用: 二极管激光二极管PC
文件页数/大小: 50 页 / 439 K
品牌: AKM [ ASAHI KASEI MICROSYSTEMS ]
 浏览型号AK2572的Datasheet PDF文件第31页浏览型号AK2572的Datasheet PDF文件第32页浏览型号AK2572的Datasheet PDF文件第33页浏览型号AK2572的Datasheet PDF文件第34页浏览型号AK2572的Datasheet PDF文件第36页浏览型号AK2572的Datasheet PDF文件第37页浏览型号AK2572的Datasheet PDF文件第38页浏览型号AK2572的Datasheet PDF文件第39页  
ASAHI KASEI  
[AK2572]  
9.2 Write Protect Operation  
Accessible range and Device address via Digital I/F are determined by Write Protect setting as shown in Table  
9-1.  
Table 9-1 Write Protect Operation  
Item  
WP = “H”  
1010 xxx  
WP = “L”  
x
1010 000  
R_WP_CTRL  
Device address  
ACK  
0
1
1010 000  
When corresponding Device address is input via Digital I/F [*1]  
Access to  
EEPROM / Register  
A0h only  
A0h only  
Read only  
Full Access [*2]  
Read only  
Self-Operation Self-Operation  
Operation mode  
Transition to any operation mode is possible  
Mode only  
Mode only  
Sequential write operation of EEPROM is possible in  
every 16 bytes. Sequential write operation of Register  
(Address after A8h/3Eh is folded back to A8h/00h).  
Sequential read operation of both EEPROM and  
Register is possible within the designated address  
Page Write  
area respectively. Address after A6h/FFh is folded Sequential read is possible in  
back to A0h/00h in EEPROM and address after accessible EEPROM area.  
A8h/3Fh is folded back to A8h/00h in Register.  
Sequential Read  
“Non-actual space“ address is not skipped.  
*1ACK signal is not returned during the writing operation into EEPROM.  
*2When Write Protect is released (WP-pin“H” and R_WP_CTRL”0”), writing into R_PWR_SEL[1:0] at  
address =A8h / 2Fh is possible in Self-Operation Mode.  
About Write Protect Setting  
* The data for fully accessible setting (E_WP_CTRL”0”, E_PASSWD”0”) is programmed atAKM.  
(a) Write Protect operation is “ON” when WP-pin at “L”.  
WP-pin setting has a higher priority than R_WP_CTRL (Register for Write Protect setting).  
(b) Write Protect operation is controlled to be “ON ” or “OFF” by R_WP_CTRL when WP-pin is at “H”.  
Access to R_WP_CTRL is possible only when R_PASSWD [7:0] (Register for Write Protect password), which  
is loaded via digital I/F, agrees with E_PASSWD [7:0] that is the password retained in advance.  
Be noted that other than “00h” should be written into E_PASSWD [7:0] to enable Write Protect.  
- R_WP_CTRL”0” Full access is possible  
- R_WP_CTRL”1” Only the area in Device address’1010 000A0h‘ is accessible (Read Only),  
especially only Write Protect control register (R_PASSWD, R_WP_CTRL) are writable  
Accordingly, when Self-Operation Mode is set by R_WP_CTRL“1”, access to the adjusting data is executed  
as the following procedure,  
(1) Make it enable to access to R_WP_CTRL by setting the same value to R_PASSWD as is retained in  
E_PASSWD in advance.  
(2) Set R_WP_CTRL“0” to enable full access.  
(3) When to modify EEPROM content, shift the mode into EEPROMAccess Mode and then modify data.  
At the Power-on or when Self-Operation Mode is set, R_PASSWD is reset to “00h” and E_WP_CTRL value  
is loaded to R_WP_CTRL. So, if E_WP_CTRL is set to “0”, Write Protect operation is automatically released  
at Power-on or when Self-Operation Mode is set.  
Table 9-2 Write Protect Control Register / EEPROM  
Register  
A0h / 7Eh  
A0h / 7Fh  
EEPROM  
A6h / 7Eh  
A6h / 7Fh  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
WP_CTRL  
PASSWD  
-35-  
< MS0290-E-01>  
2004/8  
 复制成功!