AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
ELECTRICAL CHARACTERISTICS
TA = 25°C Unless Otherwise Noted
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS=VGS,ID=250μA
VDS=0V, VGS=±4.5V
VDS=20V, VGS=0V
0.45
-
0.9
±1.0
100
5
V
-
±0.5
0.3
-
μA
nA
μA
mA
-
Zero Gate Voltage Drain Current
On-State Drain CurrentaNOTE3
IDSS
VDS=20V, VGS=0V, TJ=85°C
VDS=5 V, VGS=4.5V
VGS=4.5V, ID=600mA
VGS=2.5V, ID=500mA
VGS=1.8V, ID=350mA
VDS=10V, ID=400mA
IS=150mA,VGS=0V
-
ID(on)
700
-
-
-
-
-
-
-
0.41
0.53
0.70
1.0
0.8
0.70
0.85
1.25
-
Drain-Source On-State
ResistanceaNOTE3
rDS(on)
Ω
Forward TransconductanceNOTE3
Diode Forward VoltageNOTE3
Dynamic NOTE4
gfs
S
V
VSD
1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
td(ON)
tr
-
-
-
750
75
225
5
-
-
-
-
-
-
-
VDS=10V, VGS=4.5V,
ID=250mA
pC
ns
-
VDD=10V, RL=47Ω,
ID≅200mA, VGEN=4.5V,
RG=10Ω
-
-
-
5
Turn-off Delay Time
td(OFF)
25
11
Fall Time
tf
NOTE3: Pulse test: pulse width ≤300us, duty cycle≤ 2%
NOTE4: Guaranteed by design, not subject to production testing.
REV1.0
- SEP 2015 RELEASED -
- 4 -
AITSEMI [ AiT Semiconductor ]
