AM1012
AiT Semiconductor Inc.
www.ait-ic.com
MOSFET
N-CHANNEL 1.8-V (G-S) MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25℃, unless Otherwise Noted
Parameter
5 secs
Steady State Unit
Symbol
VDS
Drain-Source Voltage
20
V
Gate-Source Voltage
VGS
±6
V
TA=25°C
TA=85°C
600
400
500
Continuous Drain Current (TJ = 150°C)NOTE2
ID
350
mA
Pulsed Drain Current NOTE1
IDM
IS
1000
Continuous Source Current (diode conduction)NOTE2
275
175
90
250
150
80
TA=25°C
Maximum Power DissipationNOTE2 for SC-75
Maximum Power DissipationNOTE2 for SC-89
PD
PD
TA=85°C
TA=25°C
TA=85°C
mW
272
160
250
140
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TJ, TSTG
ESD
-55 to150
2000
℃
V
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Pulse width limited by maximum junction temperature.
NOTE2: Surface Mounted on FR4 Board.
REV1.0
- SEP 2015 RELEASED -
- 3 -
AITSEMI [ AiT Semiconductor ]
