AiT Semiconductor Inc.
AM0765AH
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
V(BR)DSS
Conditions
Min
Typ
Max Units
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±30V
650
2.5
-
-
-
-
-
V
V
VGS(th)
IGSS
4.5
±100
nA
VDS=650V, VGS=0V
-
-
1
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
μA
Ω
VDS=650V, VGS=0V,
TJ=150°C
-
-
10
VGS=10V, ID=3.5A
VGS=10V, ID=2.0A
VGS=10V, ID=4.0A
-
-
-
1.15
1.11
1.17
-
-
-
RDS(ON)
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
998
102
13
-
-
-
-
-
-
VGS=0V, VDS=25V,
f=1MHz
pF
nC
28
VDD=520V, ID=7A
VGS=10V
Qgs
Qgd
4.8
14
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Forward Voltage
THERMAL DATA
IS
-
-
-
-
7
A
V
VSD
IF =Is, VGS = 0V
1.5
TO-220
TO-220F
TO-220
TO-220F
°C
-
-
-
-
-
-
-
-
0.75
2.3
Thermal Resistance Junction to Case
RθJC
RθJA
/W
Thermal Resistance Junction to
Ambient
62.5
62.5
°C
/W
REV1.0
- DEC 2017 RELEASED -
- 4 -
AITSEMI [ AiT Semiconductor ]
