AiT Semiconductor Inc.
AM0765AH
www.ait-ic.com
MOSFET
N-CHANNEL ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
VDS, Drain-Source Voltage
650V
7A
@25°C
ID, Drain Current- Continuous
@100°C
4.2A
IDM, Pulsed Drain CurrentNOTE1
28A
VGS, Gate-Source Voltage
±30V
EAS, Single Pulse AvalancheNOTE2
220mJ
7A
IAS, Pulsed Avalanche RatingNOTE2
TJ, TSTG, Operating Junction & Storage Temperature
TL, Lead Temperature (1/16” from case for 10sec.)
−55°C ~150°C
300°C
Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and
operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
NOTE1: Pulse width limited by maximum junction temperature.
NOTE2: VDD = 50V, VDS = 650V, RG = 25 Ω, TJ: 25°C
REV1.0
- DEC 2017 RELEASED -
- 3 -
AITSEMI [ AiT Semiconductor ]
