6
I
OH
– HIGH LEVEL OUTPUT CURRENT – µA
15
V
CC
= 5.5 V
V
O
= 5.5 V
I
F
= 250 µA
10
V
OL
– LOW LEVEL OUTPUT VOLTAGE – V
0.5
I
F
– FORWARD CURRENT – mA
V
CC
= 5.5 V
I
F
= 5.0 mA
100
T
A
= 25°C
10
1.0
I
F
+
V
F
–
0.4
I
O
= 12.8 mA
0.3
I
O
= 16 mA
0.1
5
0.2
I
O
= 9.6 mA
0.1
-60 -40 -20
I
O
= 6.4 mA
0.01
0.001
1.10
0
-60 -40 -20
0
20
40
60
80 100
0
20
40
60
80 100
1.20
1.30
1.40
1.50
1.60
T
A
– TEMPERATURE – °C
T
A
– TEMPERATURE – °C
V
F
– FORWARD VOLTAGE – VOLTS
Figure 1. High Level Output
Current vs. Temperature.
Figure 2. Low Level Output Voltage
vs. Temperature.
Figure 3. Input Diode Forward
Characteristic.
6
V
O
– OUTPUT VOLTAGE – V
5
4
3
V
CC
= 5 V
T
A
= 25 °C
R
L
= 350
Ω
R
L
= 1 KΩ
PULSE GEN.
Z
O
= 50
Ω
t
f
= t
r
= 5 ns
I
F
1
V
CC
6
0.1µF
BYPASS
5
INPUT
MONITORING
NODE
R
M
*C
L
3
GND
4
2
R
L
= 4 KΩ
1
0
+5 V
R
L
OUTPUT V
O
MONITORING
NODE
0
1
2
3
4
5
6
I
F
– FORWARD INPUT CURRENT – mA
Figure 4. Output Voltage vs.
Forward Input current.
*C
L
IS APPROXIMATELY 15 pF WHICH INCLUDES
PROBE AND STRAY WIRING CAPACITANCE.
I
OL
– LOW LEVEL OUTPUT CURRENT – mA
80
V
CC
= 5.0 V
V
OL
= 0.6 V
60
I
F
= 10 mA, 15 mA
40
I
F
= 5.0 mA
20
OUTPUT
V
O
I
F
= 7.5 mA
INPUT
I
F
t
PHL
t
PLH
I
F
= 3.75 mA
1.5 V
Figure 6. Test Circuit for t
PHL
and t
PLH
.
0
-60 -40 -20
0
20
40
60
80 100
T
A
– TEMPERATURE – °C
Figure 5. Low Level Output Current
vs. Temperature.