ATF-511P8 Absolute Maximum Ratings[1]
Notes:
Absolute
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
Symbol
Parameter
Units
Maximum
VDS
VGS
Drain–Source Voltage[2]
Gate–Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
V
7
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 30 mW/°C for TB > 50°C.
4. With 10 Ohm series resistor in gate supply
and 3:1 VSWR.
V
-5 to 1
VGD
IDS
V
-5 to 1
A
1
5. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
IGS
Gate Current
mA
W
46
Pdiss
Pin max.
TCH
Total Power Dissipation[3]
RF Input Power[4]
3
6. Device can safely handle +30dBm RF Input
dBm
°C
+30
Power provided I
limited to 46mA. I at
GS
GS
drive level is bias circuit dependent.
Channel Temperature
Storage Temperature
Thermal Resistance[5]
150
P
1dB
TSTG
θch_b
°C
-65 to 150
33
°C/W
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA[6,7]
200
160
120
80
240
200
160
120
80
1000
900
800
700
600
500
400
300
200
100
0.8 V
0.7 V
Cpk = 3.24
Cpk = 1.66
Stdev = 0.6
Stdev = 0.15
+3 Std
-3 Std
+3 Std
-3 Std
0.6 V
0.5 V
40
40
0
0
0
0
35
38
41
OIP3 (dBm)
44
47
28
29
30
31
2
4
6
8
P1dB (dBm)
V
(V)
DS
Figure 2. OIP3
LSL = 38.5, Nominal = 41.7.
Figure 3. P1dB
LSL = 28.5, Nominal = 30.
Figure 1. Typical I-V Curves
(V = 0.1 per step).
gs
150
120
90
60
30
0
160
120
Cpk = 1.4
Cpk = 3.03
Stdev = 0.31
Stdev = 1.85
-3 Std
+3 Std
-3 Std
+3 Std
80
40
0
13
14
15
16
17
52
57
62
67
72
77
82
GAIN (dB)
PAE (%)
Figure 4. Gain
LSL = 13.5, Nominal = 14.8, USL = 16.5.
Figure 5. PAE
LSL = 52, Nominal = 68.9.
Notes:
6. Distribution data sample size is 400 samples taken from 4 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
7. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
2
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