ATF-34143 Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
I
dss [1]
V
P [1]
I
d
g
m[1]
I
GDO
I
gss
NF
Parameters and Test Conditions
Saturated Drain Current
Pinchoff Voltage
Quiescent Bias Current
Transconductance
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
OIP3
Output 3
rd
Order
f = 2 GHz
[3]
+5 dBm P
Intercept Point
out
/Tone
f = 900 MHz
+5 dBm P
out
/Tone
1 dB Compressed
f = 2 GHz
Intercept Point
[3]
f = 900 MHz
V
DS
= 1.5 V, V
GS
= 0 V
V
DS
= 1.5 V, I
DS
= 10% of I
dss
V
GS
= 0.34 V, V
DS
= 4 V
V
DS
= 1.5 V, g
m
= I
dss
/V
P
V
GD
= 5 V
V
GD
= V
GS
= -4 V
V
DS
= 4 V, I
DS
= 60 mA
V
DS
= 4 V, I
DS
= 30 mA
V
DS
= 4 V, I
DS
= 60 mA
V
DS
= 4 V, I
DS
= 60 mA
V
DS
= 4 V, I
DS
= 30 mA
V
DS
= 4 V, I
DS
= 60 mA
V
DS
= 4 V, I
DS
= 60 mA
V
DS
= 4 V, I
DS
= 30 mA
V
DS
= 4 V, I
DS
= 60 mA
V
DS
= 4 V, I
DS
= 60 mA
V
DS
= 4 V, I
DS
= 30 mA
V
DS
= 4 V, I
DS
= 60 mA
Units
mA
V
mA
mmho
µA
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
29
Min. Typ.
[2]
90
-0.65
—
180
—
118
-0.5
60
230
30
0.5
0.5
16
0.4
17.5
17
21.5
31.5
30
31
20
19
18.5
Max.
145
-0.35
—
—
500
300
0.8
G
a
Associated Gain
19
P
1dB
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Using production test board.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag
= 0.30
Γ_ang
= 56°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
Figure 5. Block diagram of 2 GHz producution test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit
losses. Circuit losses have been de-embedded from actual measurements.
3
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