ATF-33143 Typical Performance Curves
40
40
2V
3V
4V
OIP3, IIP3 (dBm)
20
OIP3, IIP3 (dBm)
2V
3V
4V
30
30
20
10
10
0
0
20
40
60
I
DSQ
(mA)
80
100
120
0
0
20
40
60
I
DSQ
(mA)
80
100
120
Figure 6. OIP3, IIP3 vs. Bias
[1]
at
2GHz.
25
Figure 7. OIP3, IIP3 vs. Bias
[1]
at
900 MHz.
25
20
20
P
1dB
(dBm)
15
P
1dB
(dBm)
2V
3V
4V
15
10
10
5
5
2V
3V
4V
0
0
20
40
60
I
DSQ
(mA)
80
100
120
0
0
20
40
60
I
DSQ
(mA)
80
100
120
Figure 8. P
1dB
vs. Bias
[1,2]
at 2 GHz.
Figure 9. P
1dB
vs. Bias
[1,2]
Tuned for NF
@ 4V, 80mA at 900MHz.
1.4
1.2
1.0
0.8
0.6
22
21
1.2
1.0
0.8
G
a
19
18
17
16
0
20
40
60
I
DSQ
(mA)
80
100
NF
16
15
G
a
14
NOISE FIGURE (dB)
20
13
12
11
10
0
20
40
60
I
DSQ
(mA)
80
100
0.6
0.4
2V
3V
4V
NF
2V
3V
4V
0.4
0.2
120
0.2
0
120
Figure 10. NF and G
a
vs. Bias
[1]
at
2GHz.
Figure 11. NF and G
a
vs. Bias
[1]
at
900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V
80 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is approached, the drain current may increase or decrease
depending on frequency and dc bias point. At lower values of I
DSQ
the device is running closer to class B as power output approaches
P
1dB
. This results in higher P
1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing.
4
NOISE FIGURE (dB)
G
a
(dB)
G
a
(dB)
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
