ATF-33143 Absolute Maximum Ratings
[1]
Symbol
V
DS
V
GS
V
GD
I
DS
P
diss
P
in max
T
CH
T
STG
θ
jc
Parameter
Drain - Source Voltage
[2]
Gate - Source Voltage
[2]
Gate Drain Voltage
[2]
Drain Current
[2]
Total Power Dissipation
[4]
RF Input Power
Channel Temperature
[5]
Storage Temperature
Thermal Resistance
[6]
Units
V
V
V
mA
mW
dBm
°C
°C
°C/W
Absolute
Maximum
5.5
-5
-5
I
dss [3]
600
20
160
-65 to 160
145
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. V
GS
= 0 V
4. Source lead temperature is 25°C.
Derate 6 mW/
°C
for T
L
> 60°C.
5. Please refer to failure rates in reliability
section to assess the reliability impact
of running devices above a channel
temperature of 140°C.
6. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts
[8, 9]
500
+0.6 V
120
100
80
Cpk = 1.7
Std = 0.05
400
I
DS
(mA)
300
0V
-3 Std
60
+3 Std
200
40
100
–0.6 V
20
0
0.2
0
0
2
4
V
DS
(V)
6
8
0.3
0.4
0.5
NF (dB)
0.6
0.7
0.8
Figure 1. Typical Pulsed I-V
(V
GS
= -0.2 V per step)
100
Curves
[7]
.
Figure 2. NF @ 2 GHz, 4 V, 80 mA.
LSL=0.2, Nominal=0.53, USL=0.8
120
100
80
Cpk = 1.21
Std = 0.94
Cpk = 2.3
Std = 0.2
80
60
-3 Std
+3 Std
60
-3 Std
+3 Std
40
40
20
20
0
29
31
33
OIP3 (dBm)
35
37
0
13
14
15
GAIN (dB)
16
17
Figure 3. OIP3 @ 2 GHz, 4 V, 80 mA.
LSL=30.0, Nominal=33.3, USL=37.0
Figure 4. Gain @ 2 GHz, 4 V, 80 mA.
LSL=13.5, Nominal=14.8, USL=16.5
Notes:
7. Under large signal conditions, V
GS
may
swing positive and the drain current may
exceed I
dss
. These conditions are
acceptable as long as the maximum P
diss
and P
in max
ratings are not exceeded.
8. Distribution data sample size is 450
samples taken from 9 different wafers.
Future wafers allocated to this product
may have nominal values anywhere
within the upper and lower spec limits.
9. Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production
2
test requirements. Circuit losses have
been de-embedded from actual
measurements.
10. The probability of a parameter being
between
±1σ
is 68.3%, between
±2σ
is
95.4% and between
±3σ
is 99.7%.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
