0.5–12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10236
Features
Description
36 micro-X Package
The ATF-10236 is a high performance
gallium arsenide Schottky-barrier-
gate field effect transistor housed in a
cost effective microstrip package. Its
low noise figure makes this device
appropriate for use in the first and
second stages of low noise amplifiers
operatinginthe0.5-12 GHzfrequency
range.
• Low Noise Figure:
0.8 dBTypicalat4 GHz
• LowBias:
VDS=2V,IDS=20 mA
• High Associated Gain:
13.0 dBTypicalat4 GHz
• HighOutputPower:20.0 dBm
TypicalP1dBat4 GHz
• Cost Effective Ceramic
Microstrip Package
This GaAs FET device has a nominal
0.3 micron gate length using airbridge
interconnects between drain fingers.
Total gate periphery is 500 microns.
Proven gold based metallization
systems and nitride passivation
• Tape-And-Reel Packaging
Option Available[1]
assure a rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
Units Min. Typ. Max.
NFO
f=2.0GHz
f=4.0GHz
f=6.0GHz
dB
dB
dB
0.6
0.8
1.0
1.0
GA
Gain @ NF ; VDS = 2 V, IDS = 25 mA
f=2.0GHz
f=4.0GHz
f=6.0GHz
dB
dB
dB
16.5
13.0
10.5
O
12.0
P1 dB
Power Output @ 1 dB Gain Compression
VDS =4V, IDS =70mA
f=4.0GHz dBm
20.0
G1 dB
gm
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
Transconductance: VDS = 2 V, VGS = 0 V
Saturated Drain Current: VDS = 2 V, VGS = 0 V
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
f=4.0GHz
dB
mmho 80
12.0
140
130
-1.3
IDSS
VP
mA
V
70
180
-0.8
-3.0
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5965-8697E
5-26
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
