0.5–12 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-10100
chip. Its premium noise figure
Features
Chip Outline
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• LowBias:
0.5-12 GHzfrequencyrange.
VDS=2V,IDS = 25mA
G
G
• High Associated Gain:
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500 microns.Provengoldbased
metallization systems and nitride
passivation assure a rugged,
reliable device.
14.0 dB Typical at 4 GHz
• High Output Power:
21.0 dBm Typical P1 dB at 4 GHz
S
D
S
Description
The ATF-10100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Units Min. Typ. Max.
NFO
Optimum Noise Figure: VCE = 2 V, IDS = 25 mA
f=2.0GHz
f=4.0GHz
f=6.0GHz
dB
dB
dB
0.4
0.55
0.8
0.7
GA
Gain @ NF ; VDS = 2 V, IDS = 25 mA
f=2.0GHz
f=4.0GHz
f=6.0GHz
dB
dB
dB
17.0
14.0
12.0
O
12.0
P1 dB
Power Output @ 1 dB Gain Compression
VDS =4V, IDS =70mA
f=4.0GHz dBm
21.0
G1 dB
gm
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
Transconductance: VDS = 2 V, VGS = 0 V
Saturated Drain Current: VDS = 2 V, VGS = 0 V
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
f=4.0GHz
dB
mmho 80
15.0
140
130
-1.3
IDSS
VP
mA
V
70
180
-0.8
-3.0
Note:
1. RF performance is determined by packaging and testing 10 devices per wafer
.
5-19
5965-8702E
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
