ATF-10100 Absolute Maximum Ratings
Notes:
Absolute
Maximum[1]
+5
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4.4 mW/°C for
TCASE >78°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Units
V
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation[2,3]
Channel Temperature
StorageTemperature[4]
V
V
mA
mW
°C
-4
-7
IDSS
430
175
°C
-65to+175
Thermal Resistance:
Liquid Crystal Measurement:
θjc =225°C/W;TCH =150°C
1 µm Spot Size[4]
Part Number Ordering Information
Part Number
Devices Per Tray
ATF-10100-GP3
50
18
15
ATF-10100 Noise Parameters: VDS = 2 V, IDS = 25 mA
G
A
Γopt
Freq.
GHz
NFO
dB
12
9
2.0
1.5
1.0
0.5
0
RN/50
Mag
Ang
1.0
2.0
4.0
6.0
8.0
0.4
0.4
0.55
0.8
1.0
0.78
0.55
0.39
0.41
0.46
13
27
65
105
144
0.40
0.29
0.22
0.16
0.10
6
NF
O
2.0
4.0
6.0
8.0 10.0 12.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
ATF-10100 Typical Performance, T A = 25°C
16
14
12
10
30
30
20
10
0
G
A
20
MSG
MSG
2
|
2
|
MAG
MAG
|S
|S
21
21
1.5
1.0
0.5
0
10
NF
O
0
1.0
2.0
4.0 6.0 8.0 10.012.0
0
10
20
30
1.0
2.0
4.0 6.0 8.0 10.012.0
FREQUENCY (GHz)
I
(mA)
FREQUENCY (GHz)
DS
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS
VDS = 2V, f = 4.0 GHz.
.
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
5-20
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
