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ATF-10100-GP3 参数 Datasheet PDF下载

ATF-10100-GP3图片预览
型号: ATF-10100-GP3
PDF下载: 下载PDF文件 查看货源
内容描述: 0.5-12 GHz的低噪声砷化镓场效应管 [0.5-12 GHz Low Noise Gallium Arsenide FET]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 53 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
 浏览型号ATF-10100-GP3的Datasheet PDF文件第1页浏览型号ATF-10100-GP3的Datasheet PDF文件第3页浏览型号ATF-10100-GP3的Datasheet PDF文件第4页  
ATF-10100 Absolute Maximum Ratings  
Notes:  
Absolute  
Maximum[1]  
+5  
1. Permanent damage may occur if  
any of these limits are exceeded.  
2. TCASE TEMPERATURE = 25°C.  
3. Derate at 4.4 mW/°C for  
TCASE >78°C.  
4. The small spot size of this tech-  
nique results in a higher, though  
more accurate determination of θjc  
than do alternate methods. See  
APPLICATIONS PRIMER IIIA for  
more information.  
Symbol  
VDS  
VGS  
VGD  
IDS  
PT  
TCH  
TSTG  
Parameter  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Gate-Drain Voltage  
Drain Current  
Power Dissipation[2,3]  
Channel Temperature  
StorageTemperature[4]  
V
V
mA  
mW  
°C  
-4  
-7  
IDSS  
430  
175  
°C  
-65to+175  
Thermal Resistance:  
Liquid Crystal Measurement:  
θjc =225°C/W;TCH =150°C  
1 µm Spot Size[4]  
Part Number Ordering Information  
Part Number  
Devices Per Tray  
ATF-10100-GP3  
50  
18  
15  
ATF-10100 Noise Parameters: VDS = 2 V, IDS = 25 mA  
G
A
Γopt  
Freq.  
GHz  
NFO  
dB  
12  
9
2.0  
1.5  
1.0  
0.5  
0
RN/50  
Mag  
Ang  
1.0  
2.0  
4.0  
6.0  
8.0  
0.4  
0.4  
0.55  
0.8  
1.0  
0.78  
0.55  
0.39  
0.41  
0.46  
13  
27  
65  
105  
144  
0.40  
0.29  
0.22  
0.16  
0.10  
6
NF  
O
2.0  
4.0  
6.0  
8.0 10.0 12.0  
FREQUENCY (GHz)  
Figure 1. Optimum Noise Figure and  
Associated Gain vs. Frequency.  
VDS = 2V, IDS = 25 mA, TA = 25°C.  
ATF-10100 Typical Performance, T A = 25°C  
16  
14  
12  
10  
30  
30  
20  
10  
0
G
A
20  
MSG  
MSG  
2
|
2
|
MAG  
MAG  
|S  
|S  
21  
21  
1.5  
1.0  
0.5  
0
10  
NF  
O
0
1.0  
2.0  
4.0 6.0 8.0 10.012.0  
0
10  
20  
30  
1.0  
2.0  
4.0 6.0 8.0 10.012.0  
FREQUENCY (GHz)  
I
(mA)  
FREQUENCY (GHz)  
DS  
Figure 3. Insertion Power Gain,  
Maximum Available Gain and  
Figure 4. Insertion Power Gain,  
Maximum Available Gain and  
Maximum Stable Gain vs. Frequency.  
VDS = 4 V, IDS = 70 mA.  
Figure 2. Optimum Noise Figure and  
Associated Gain vs. IDS  
VDS = 2V, f = 4.0 GHz.  
.
Maximum Stable Gain vs. Frequency.  
VDS = 2 V, IDS = 25 mA.  
5-20  
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