AT-64020 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
W
°C
°C
Absolute
Maximum
[1]
2
40
20
200
3
200
-65 to 200
Thermal Resistance
[2,4]
:
θ
jc
= 40°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 25 mW/°C for T
C
> 80°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, T
A
= 25°C
Symbol
|S
21E
|
2
P
1 dB
G
1 dB
η
T
h
FE
I
CBO
I
EBO
Parameters and Test Conditions
[1]
Insertion Power Gain; V
CE
= 16 V, I
C
= 110 mA
Power Output @ 1 dB Gain Compression
V
CE
= 16 V, I
C
= 110 mA
1 dB Compressed Gain; V
CE
= 16 V, I
C
= 110 mA
Total Efficiency at 1 dB Compression:
V
CE
= 16 V, I
C
= 110 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 110 mA
Collector Cutoff Current; V
CB
= 16 V
Emitter Cutoff Current; V
EB
= 1 V
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 4.0 GHz
Units
dB
dBm
dB
%
—
µA
µA
20
26.5
8.5
Min.
Typ. Max.
7.0
2.0
27.5
26.5
10.0
6.5
35.0
50
200
100
5.0
Note:
1.
η
T
=
(RF Output Power)/(RF Input Power + V
CE
I
C
).
4-180
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
