Up to 4 GHz Linear Power
Silicon Bipolar Transistor
Technical Data
AT-64020
Features
• High Output Power:
27.5 dBm Typical P
1 dB
at 2.0 GHz
26.5 dBm Typical P
1 dB
at 4.0 GHz
• High Gain at 1 dB
Compression:
10.0 dB Typical G
1 dB
at 2.0 GHz
6.5 dB Typical G
1 dB
at 4.0 GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia
Package
Description
The AT-64020 is a high perfor-
mance NPN silicon bipolar
transistor housed in a hermetic
BeO disk package for good
thermal characteristics. This
device is designed for use in
medium power, wide band
amplifier and oscillator applica-
tions operating over VHF, UHF
and microwave frequencies.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metallization
in the fabrication of these devices.
The use of ion-implanted ballast
resistors ensures uniform current
distribution through the multiple
emitter fingers.
200 mil BeO Package
4-179
5965-8915E
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
