AT-41435 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
[4]
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
20
12
60
500
200
-65 to 200
Thermal Resistance
[2,5]
:
θ
jc
= 200°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 5 mW/°C for T
C
> 100°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit. After a device has been soldered into a
circuit, it may be safely stored up to 200°C.
5. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications, T
A
= 25°C
Symbol
|S
21E
|
2
P
1 dB
G
1 dB
NF
O
Parameters and Test Conditions
Insertion Power Gain; V
CE
= 8 V, I
C
= 25 mA
Power Output @ 1 dB Gain Compression
V
CE
= 8 V, I
C
= 25 mA
1 dB Compressed Gain; V
CE
= 8 V, I
C
= 25 mA
Optimum Noise Figure: V
CE
= 8 V, I
C
= 10 mA
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units
dB
dBm
dB
dB
Min.
Typ. Max.
11.5
6.0
19.0
18.5
14.0
9.5
1.3
1.7
3.0
18.5
14.0
10.0
8.0
30
150
270
0.2
1.0
2.0
G
A
Gain @ NF
O
; V
CE
= 8 V, I
C
= 10 mA
dB
13.0
GHz
—
µA
µA
pF
f
T
h
FE
I
CBO
I
EBO
C
CB
Gain Bandwidth Product: V
CE
= 8 V, I
C
= 25 mA
Forward Current Transfer Ratio; V
CE
= 8 V, I
C
= 10 mA
Collector Cutoff Current; V
CB
= 8 V
Emitter Cutoff Current; V
EB
= 1 V
Collector Base Capacitance
[1]
: V
CB
= 8 V, f = 1 MHz
0.2
Note:
1. For this test, the emitter is grounded.
4-115
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
