Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
AT-41435
Features
• Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
• High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
• High Gain-Bandwidth
Product:
8.0 GHz Typical f
T
• Cost Effective Ceramic
Microstrip Package
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50
Ω
at 1 GHz, makes
this device easy to use as a low
noise amplifier.
The AT-41435 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
T
Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
35 micro-X Package
Description
Hewlett-Packard’s AT-41435 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41435 is housed in a cost
effective surface mount 100 mil
micro-X package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
5965-8925E
4-114
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