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ABA-51563-BLK 参数 Datasheet PDF下载

ABA-51563-BLK图片预览
型号: ABA-51563-BLK
PDF下载: 下载PDF文件 查看货源
内容描述: 3.5 GHz的宽带硅RFIC放大器 [3.5 GHz Broadband Silicon RFIC Amplifier]
分类和应用: 射频和微波射频放大器微波放大器
文件页数/大小: 8 页 / 104 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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Agilent ABA-51563  
3.5 GHz Broadband Silicon  
RFIC Amplifier  
Data Sheet  
Features  
• Operating frequency: DC ~ 3.5 GHz  
• 21.5 dB gain  
• VSWR < 2.0 throughout operating  
frequency  
• 1.8 dBm output P1dB  
• 3.7 dB noise figure  
Description  
Surface Mount Package  
SOT-363/SC70  
Agilent’s ABA-51563 is an  
economical, easy-to-use, inter-  
nally 50-ohm matched silicon  
monolithic broadband amplifier  
that offers excellent gain and flat  
broadband response from DC to  
3.5 GHz. Packaged in an ultra-  
miniature industry-standard  
SOT-363 package, it requires half  
the board space of a SOT-143  
package.  
• Unconditionally stable  
• Single 5V supply (Id = 18 mA)  
• Lead-free option available  
Applications  
• Amplifier for cellular, cordless,  
special mobile radio, PCS, ISM,  
wireless LAN, DBS, TVRO, and TV  
tuner applications  
Pin Connections and  
Package Marking  
Output  
& Vcc  
At 2 GHz, the ABA-51563 offers a  
small-signal gain of 21.5 dB,  
output P1dB of 1.8 dBm and  
11.4 dBm output third order  
intercept point. It is suitable for  
use as buffer amplifiers for  
GND 1  
GND 2  
Input  
GND 3  
Vcc  
Attention:  
Observe precautions for  
handling electrostatic  
sensitive devices.  
wideband applications. They are  
designed for low cost gain blocks  
in cellular applications, DBS  
tuners, LNB and other wireless  
communications systems.  
ESD Machine Model (Class A)  
Note:  
Top View. Package marking provides orientation  
and identification. “x” is character to identify  
date code.  
ESD Human Body Model (Class 1A)  
Refer to Agilent Application Note A004R:  
Electrostatic Discharge Damage and Control.  
Simplified Schematic  
ABA-51563 is fabricated using  
Agilent’s HP25 silicon bipolar  
process, which employs a double-  
diffused single polysilicon  
RF  
Output  
& Vcc  
Vcc  
process with self-aligned submi-  
cron emitter geometry. The  
process is capable of simulta-  
neous high fT and high NPN  
breakdown (25 GHz fT at 6V  
BVCEO). The process utilizes  
industry standard device oxide  
isolation technologies and  
RF  
Input  
Ground 2  
Ground 3  
Ground 1  
submicron aluminum multilayer  
interconnect to achieve superior  
performance, high uniformity,  
and proven reliability.  
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