ABA-51563 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute Max.
Thermal Resistance[2] (Vcc = 5V)
θjc = 104°C/W
Vcc
Pin
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power (Vcc = 5V)
Total Power Dissipation[3]
V
+7
Notes:
dBm
W
+20
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 2.3 mW/°C for Tb> 120.8°C.
Pdiss
Tj
0.3
Junction Temperature
°C
°C
150
TSTG
Storage Temperature
-65 to 150
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp[1]
Power Gain (|S21|2)
dB
dB
20
21.5
0.2
∆Gp
Power Gain Flatness,
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
1.0
1.3
NF[1]
Noise Figure
dB
3.7
1.8
11.4
1.2
1.2
18
4
0.12
0.13
0.24
P1dB[1]
OIP3[1]
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
dBm
dBm
[1]
VSWRin
[1]
VSWRout
Icc[1]
Output VSWR
Device Current
mA
ps
28
0.3
td[1]
Group Delay
140
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
C
block
RF Output
RFC
RF Input
Vcc
C
block
C
bypass
Figure 1. ABA-51563 Production Test Circuit.
2