11
PULSE
GENERATOR
OUTPUT V
MONITORING
NODE
E
Z
= 50 Ω
= 5 ns
O
r
t
+5 V
D.U.T.
V
CC
R
L
V
E
I
= 13 mA
F
V
OUT
OUTPUT V
MONITORING
NODE
O
0.01 µF
BYPASS
C *
L
GND
* C INCLUDES PROBE AND
L
STRAY WIRING CAPACITANCE.
Figure 9. Enable Propagation Delay
vs. Temperature.
Figure 8. Test Circuit for t
and t
.
ELH
EHL
V
CC
+5.5 V
V
D.U.T.*
OC
+5.5 V
V
CC
(EACH INPUT)
0.01 µF
+
–
V
200 Ω
200 Ω
(EACH OUTPUT)
IN
5.3 V
(EACH OUTPUT)
GND
CONDITIONS: I = 20 mA
F
I
= 25 mA
O
T
= +125 °C
A
* ALL CHANNELS TESTED SIMULTANEOUSLY.
Figure 10. Operating Circuit for Burn-In and Steady State Life Tests.