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1N5767 参数 Datasheet PDF下载

1N5767图片预览
型号: 1N5767
PDF下载: 下载PDF文件 查看货源
内容描述: PIN二极管的射频开关和衰减 [PIN Diodes for RF Switching and Attenuating]
分类和应用: 二极管开关射频开关测试衰减器
文件页数/大小: 4 页 / 43 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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2
Mechanical
Specifications
The Agilent Outline 15 package
has a glass hermetic seal with
dumet leads. The lead finish is 95-
5 tin-lead (SnPb) for all PIN
diodes. The leads on the Outline
15 package should be restricted
so that the bend starts at least 1/
16 inch (1.6 mm) from the glass
body. Typical package inductance
and capacitance are 2.5 nH and
0.13 pF, respectively. Marking is
by digital coding with a cathode
band.
General Purpose Diodes
Electrical Specifications at T
A
= 25°C
Part
Number
5082-
Maximum
Total
Capacitance
C
T
(pF)
Minimum
Breakdown
Voltage
V
BR
(V)
Maximum
Residual Series
Resistance
R
S
(Ω)
1.0
1.25
1.25
1.5
0.6**
I
F
=100 mA
*I
F
= 20 mA
**I
F
= 10 mA
f = 100 MHz
Effective Carrier Reverse Recovery
Lifetime
Time
τ
(ns)
t
rr
(ns)
100 (min.)
100 (min.)
100 (min.)
100 (min.)
70 (typ.)*
I
F
= 50 mA
I
R
= 250 mA
*I
F
= 10 mA
*I
R
= 6 mA
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
12 (typ.)
I
F
= 20 mA
V
R
= 10 V
90% Recovery
General Purpose Switching and Attenuating
3001
0.25
200
3039
0.25
150
1N5719
0.3**
150
3077
0.3
200
Band Switching
3188
1.0*
35
Test
V
R
= 50 V
V
R
= V
BR
Conditions
*V
R
= 20 V
Measure
**V
R
= 100 V
I
R
10
µA
f = 1 MHz
Notes:
Typical CW power switching capability for a shunt switch in a 50
system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specifications at T
A
= 25°C
Max.
Effective
Min.
Residual
Max.
Carrier Breakdown
Series
Total
Lifetime
Voltage
Resistance Capacitance
t (ns)
V
BR
(V)
R
S
(Ω)
C
T
(pF)
1300 (typ.)
100
2.5
0.4
1300 (typ.)
100
2.5
0.4
1300 (typ.)
50
0.4
2500 (typ.)
100
3.5
0.4
High
Resistance
Limit, R
H
(W)
Min.
1000
1000
1500
Max.
Low
Resistance
Limit, R
L
(W)
Min.
Max.
8**
8**
8**
8**
Max.
Difference
in
Resistance
vs. Bias
Slope, Dc
Part
Number
5082-3080
1N5767*
5082-3379
5082-3081
Test
I
F
= 50 mA V
R
= V
BR
, I
F
= 100 mA
Conditions I
R
= 250 mA Measure f = 100 MHz
I
R
10
µA
V
R
= 50 V
f = 1 MHz
I
F
= 0.01 mA
f = 100 MHz
I
F
= 1.0 mA
Batch
I
F
= 20 mA** Matched at
f = 100 MHz I
F
= 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specifications:
τ
= 1.0 msec minimum
I
R
= 1
µA
maximum at V
R
= 50 V
V
F
= 1 V maximum at I
F
= 100 mA.