3
Typical Parameters at T
A
= 25°C (unless otherwise noted)
100
I
F
– FORWARD CURRENT (mA)
5082-3001, 3039,
3077, 3080
IN5719
10,000
100,000
RF RESISTANCE (OHMS)
10
100
5082-3001
5082-3039
5082-3077
IN5719
RF RESISTANCE (OHMS)
1000
10,000
1000
5082-3081
1
125°C
25°C
–60°C
10
100
5082-3080
5082-3379
0.1
1
10
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
0.001
0.01
0.1
1
10
100
1
0.001
0.01
0.1
1
10
100
V
F
– FORWARD VOLTAGE (V)
I
F
– FORWARD BIAS CURRENT (mA)
I
F
– FORWARD BIAS CURRENT (mA)
Figure 1. Forward Current vs.
Forward Voltage.
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
1.0
2.5
REVERSE RECOVERY TIME (ns)
1000
5082-3001
3039
3077
IN5719
2.0
CAPACITANCE (pF)
CAPACITANCE (pF)
1.5
.5
5082-3039
IN5719
5082-3001
100
V
R
= 5V
V
R
= 10V
V
R
= 20V
1.0
5082-3188
.5
5082-3080
5082-3081
5082-3379
0
0
10
20
30
40
50
60
70
REVERSE VOLTAGE (V)
0
0
10
20
30
40
10
0
10
20
30
FORWARD CURRENT (mA)
50
60
70
REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance vs.
Reverse Voltage.
Figure 5. Typical Capacitance vs.
Reverse Voltage.
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
0
BELOW FIRST ORDER (dB)
20
BELOW FIRST ORDER (dB)
10 dB Bridged Tee Attenuator
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
10
20
30
40
50
60
70
PIN Diode Cross Modulation
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
100% Modulation 15 kHz
40 dB mV Output Levels
40
5082-3080
5082-3379
60
5082-3080
5082-3379
80
5082-3081
5082-3081
100
0
10
20
30
40
50
60
70
80
FREQUENCY (MHz)
80
0
10
20
30
40
50
60
70
80
MODULATED FREQUENCY (MHz)
Figure 7. Typical Second Order
Intermodulation Distortion.
Figure 8. Typical Cross Intermodulation
Distortion.
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
