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1GG7-8045 参数 Datasheet PDF下载

1GG7-8045图片预览
型号: 1GG7-8045
PDF下载: 下载PDF文件 查看货源
内容描述: [Wide Band Low Power Amplifier, 2000MHz Min, 26500MHz Max, 1 Func, GAAS, 0.1173 X 0.0303 INCH, 0.0056 INCH HEIGHT, DIE]
分类和应用: 射频微波
文件页数/大小: 6 页 / 252 K
品牌: AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
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VDD  
Aux.  
RF  
Drain  
Output  
Aux.2nd  
RF  
Gate Bias  
Input  
Aux.  
Temp.  
Chip ID No.  
Gate Bias  
Diode Sense  
Temp.  
VG1  
Extra  
Diode Sense  
(VDD & Aux  
Drain Pads)  
70  
2910  
Gate Bias  
(RF Output Pad)  
690  
555  
555  
770  
(± 10)  
285  
75  
220  
0
1690  
1890  
70  
2900  
(VG2  
Pad  
(RF Input Pad)  
0
)
2090  
2290  
2490  
2980  
(± 10)  
Notes:  
Figure 2.  
TC724 Bond Pad Locations  
All dimensions in microns.  
RF input and output Pads  
Dim.: 75 × 75 µm.  
Polygon Pad Dim.: 95 µm dia.  
All other dimensions: ± 5 µm  
(unless otherwise noted).  
1.5 mil dia. Gold Wire  
Bond to 15 nF  
DC Feedthru  
Chip thickness: 127 ± 15 µm.  
(0160-5052)  
68 pF Chip Capacitor  
4nH Inductor  
(5086-2116)  
1.0 mil Gold Wire Bond  
(Length 150 mils)  
Input & Output Thin Film  
Circuit w/pF  
Gold Plated Shim  
(5021-8739)  
Trace Offset  
168 µm  
DC Blocking Capacitor  
( 0160-5674)  
(6.6 mils)  
2.0 mil  
nom. gap  
Notes:  
V
DD  
OUT  
Part Numbers for recommended Agi-  
lent components shown in  
parenthesis.  
TC724  
V
IN  
G1  
Trace Offset  
168 µm  
Total offset between RF input and RF  
output pad is 335 µm (13.2 mils).  
(6.6 mils)  
2.0 mil  
nom. gap  
Bonding Island  
(3980-0442)  
0.7 mil dia. Gold Bond Wire  
(Length NOT important)  
1.5 mil dia Gold Wire  
Bond to 15 nF DC Feedthru  
(0160-5052)  
Figure 3.  
TC724 Assembly Diagram  
(For 2.0–26.5 GHz Operation)  
4
TC724/rev.3.3