[1]
DC Specifications/Physical Properties
Symbol
Parameters/Conditions
Min.
Typ.
Max.
Units
Saturated Drain Current
(VDD=11.0V, VG1=0.0V, VG2= open circuit)
IDSS
470
710
940
mA
First Gate Pinch-off Voltage
VP
VG2
–3.5
1.0
–1.7
2.1
–0.5
3.0
45
volts
volts
mA
(VDD=11.0V, IDD=80mA, VG2= open circuit)
Second Gate Self-Bias Voltage
(VDD=11.0V, VG1=0.0V)
First Gate Pinch-Off Current
(VDD=11.0V, VG1= –3.5V, VG2= open circuit)
I
DSOFF(VG1
)
)
2.8
Second Gate Pinch-Off Current
(VDD=11.0V, VG1=0.0V, VG2= –3.5)
IDSOFF(VG2
3.7
45
mA
Thermal Resistance
(Tbackside=25°C)
Θch–bs
22.5
°C/W
Notes:
1. Measured in wafer form with T
= 25°C. (Except Θ
).
ch–bs
chuck
[1]
RF Specifications
(V = 11.0V, I (Q) = 400mA, Z =Z =50Ω)
DD
DD
in
o
1GG7-8045
Typical
Symbol
Parameters/Conditions
Units
Min.
Max.
Guaranteed
BW
2
26.5
GHz
dB
Bandwidth[2]
S
Small Signal Gain
5.5
7.5
21
Small Signal Gain
Flatness (>4GHz)
∆S
±1.0
±1.8
dB
21
in
RL
RL
Input Return Loss
Output Return Loss
Reverse Isolation
–17
–14
–27
23
–10
–10
–20
dB
dB
out
S12
dB
P
Output Power at 1dB Gain Compression
19.5
22.5
dBm
dBm
–1dB
P
Saturated Output Power
26
sat
2nd Harm. (2<ƒo<20)
[Po(ƒo) = 24 dBm or
P–1dB whichever is less]
3rd Harm. (2 <ƒo<20)
[Po(ƒo) = 24 dBm or
P–1dB whichever is less]
H2
–20
–14
–14
dBc
H3
–30
11
dBc
dB
NF
Noise Figure
Notes:
1. Small-signal data measured in wafer form with Tchuck = 25°C. Large–signal data measured on individual devices.
2. Performance may be extended to lower frequencies through the use of appropriate off–chip circuitry. Upper corner frequency ~ 30
GHz.
2
TC724/rev.3.3
AGILENT [ AGILENT TECHNOLOGIES, LTD. ]
