DATA RETENTION CHARACTERISTICS (Pre-Radiation)
(TC = 25°C)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM UNIT
VDD
2.5V
@
VDR
VDD for data retention
2.5
--
--
400
V
1
Data retention current
mA
IDDR
1,2
Chip deselect to data retention time
Operation recovery time
0
ns
ns
tEFR
1,2
tWC or tRC
tR
Notes:
1. CE equals V
all other inputs equal V
or V .
SS
DR,
DR
2. Guaranteed but not tested.
DATA RETENTION MODE
VDR 2.5V
VDD
4.5V
tEFR
4.5V
tR
V
< 1.5V CMOS
VDR
IN
CE
Figure 6. Low VDD Data Retention Waveform
CMOS
460 ohms
90%
V
-0.5V
DD
V
/2
DD
10%
0.5V
50pF
< 5ns
< 5ns
Input Pulses
Notes:
1. 50pF including scope probe and test socket.
2. Measurement of data output occurs at the low to high or high to low transition mid-point
(CMOS input = V /2).
DD
Figure 7. AC Test Loads and Input Waveforms
16
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
