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ACT-S128K32N-020P6Q 参数 Datasheet PDF下载

ACT-S128K32N-020P6Q图片预览
型号: ACT-S128K32N-020P6Q
PDF下载: 下载PDF文件 查看货源
内容描述: 高速4兆位的SRAM多芯片模块 [High Speed 4 Megabit SRAM Multichip Module]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 10 页 / 396 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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DC Characteristics (Continued)  
(4.5Vdc< VCC < 5.5Vdc, VSS = 0V, TC = -55°C to +125°C, Unless otherwise specified)  
–017 & –020 –025 & –035 –045 & –055  
Parameter  
Sym  
Conditions  
Units  
Min Max  
Min Max  
Min Max  
CE = VIH, OE = VIH,  
f = 5 MHz, VCC = Max,  
CMOS Compatible  
ISB  
80  
60  
60  
mA  
Standby Current  
VOL  
VOH  
0.4  
2.4  
0.4  
2.4  
0.4  
2.4  
V
V
Output Low Voltage  
Output High Voltage  
IOL = 8 mA, VCC = Min  
IOH = -4.0 mA, VCC = Min  
AC Characteristics  
(VCC = 5.0V, VSS = 0V, TC = -55°C to +125°C)  
Read Cycle  
Parameter  
–017  
–020  
–025  
–035  
–045  
–055  
Sym  
Units  
Min Max Min Max Min Max Min Max Min Max Min Max  
tRC  
tAA  
tACE  
tOH  
17  
20  
25  
35  
45  
55  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read Cycle Time  
A
17  
17  
20  
20  
25  
25  
35  
35  
45  
45  
55  
55  
Address Access Time  
Chip Enable Access Time  
0
0
0
0
0
0
Output Hold from Address Change  
Output Enable to Output Valid  
Chip Enable to Output in Low Z*  
Output Enable to Output in Low Z*  
Chip Deselect to Output in High Z*  
tOE  
9
12  
15  
20  
25  
30  
tCLZ  
tOLZ  
tCHZ  
tOHZ  
3
0
3
0
3
0
3
0
3
0
3
0
12  
10  
12  
11  
12  
12  
15  
15  
20  
20  
20  
20  
Output Disable to Output in High Z*  
* Parameters guaranteed by design but not tested  
Write Cycle  
Parameter  
–017  
–020  
–025  
–035  
–045  
–055  
Sym  
Units  
Min Max Min Max Min Max Min Max Min Max Min Max  
tWC  
tCW  
tAW  
tDW  
tWP  
tAS  
17  
12  
12  
10  
13  
0
20  
15  
15  
12  
15  
0
25  
20  
20  
15  
20  
0
35  
25  
25  
18  
25  
0
45  
30  
30  
20  
30  
0
55  
40  
40  
20  
40  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write Cycle Time  
Chip Enable to End of Write  
Address Valid to End of Write  
Data Valid to End of Write  
Write Pulse Width  
Address Setup Time  
tOW  
tWHZ  
tDH  
3
3
3
4
4
4
Output Active from End of Write *  
Write to Output in High Z *  
Data Hold from Write Time  
10  
10  
10  
15  
15  
15  
0
0
0
0
0
0
0
0
0
0
0
0
tAH  
Address Hold Time  
* Parameters guaranteed by design but not tested  
Data Retention Electrical Characteristics (Special Order Only)  
(TC = -55°C to +125°C)  
Test Conditions  
CE VCC – 0.2V  
All Speeds  
Max  
Parameter  
CC for Data Retention  
Sym  
Units  
Min  
VDR  
2
5.5  
V
V
ICCDR1  
11.6  
mA  
Data Retention Current  
VCC = 3V, 17-55ns  
Aeroflex Circuit Technology ACT-S128K32  
SCD1659 REV E 5/21/01 Plainview NY (516) 694-6700  
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