RADIATION HARDNESS SPECIFICATIONS
PARAMETER
Total Dose
SEL Latchup
Neutron Fluence
2
1
LIMIT
1.0E5
>120
1.0E14
UNITS
rad(Si)
MeV-cm
2
/mg
n/cm
2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Not tested, inherent of CMOS technology.
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
V
I/O
V
DD1
V
DD2
T
STG
T
J
Θ
J C
I
I
P
D
PARAMETER
Voltage any pin
Supply voltage
Supply voltage
Storage Temperature range
Maximum junction temperature
Thermal resistance junction to case
DC input current
Maximum power dissipation
LIMIT (Mil only)
-.3 to V
DD1
+.3
-0.3 to 6.0
-0.3 to 6.0
-65 to +150
+175
20
±10
1
UNITS
V
V
V
°C
°C
°C/W
mA
W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability and performance.
DUAL SUPPLY OPERATING CONDITIONS
SYMBOL
V
DD1
V
DD2
V
IN
T
C
PARAMETER
Supply voltage
Supply voltage
Input voltage any pin
Temperature range
LIMIT
3.0 to 3.6 or 4.5 to 5.5
3.0 to 3.6 or 4.5 to 5.5
0 to V
DD1
-55 to + 125
UNITS
V
V
V
°C
4
AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
