APT50GF60B2RD/LRD
PRELIMINARY
Power dissipation
Collector current
ƒ
ƒ
I = (T )
C C
P
= (T )
tot
C
≤
≥
≤
j
parameter: T 150 °C
parameter: V
15 V , T 150 °C
j
GE
320
80
W
A
Ptot
240
IC
60
200
160
120
80
50
40
30
20
40
0
10
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
C
CE
p
≤
parameter: D = 0, T = 25°C , T 150 °C
parameter: D = t / T
C
j
p
10 3
10 0
A
K/W
t
= 2.9µs
p
IC
ZthJC
10 2
10 1
10 0
10 -1
10 µs
100 µs
1 ms
10 -1
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 ms
10 -2
single pulse
DC
10 -3
10 0
10 1
10 2
V 10 3
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
F-33700 Merignac - France
Bend, Oregon 97702-1035
Phone: (33) 5 57 92 15 15
Phone: (541) 382-8028
FAX: (33) 5 56 47 97 61
FAX: (541) 388-0364
USA
405 S.W. Columbia Street
ADPOW [ ADVANCED POWER TECHNOLOGY ]
