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APT50GF60LRD 参数 Datasheet PDF下载

APT50GF60LRD图片预览
型号: APT50GF60LRD
PDF下载: 下载PDF文件 查看货源
内容描述: 快速IGBT⑩是新一代高压功率IGBT的。 [The Fast IGBT⑩ is a new generation of high voltage power IGBTs.]
分类和应用: 晶体晶体管开关功率控制双极性晶体管高压局域网
文件页数/大小: 7 页 / 116 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT50GF60B2RD  
APT50GF60LRD  
600V 80A  
APT50GF60B2RD  
Fast IGBT& FRED  
T-Max™  
TO-264  
The Fast IGBTis a new generation of high voltage power IGBTs. Using Non-  
Punch Through Technology the Fast IGBT™ combined with an APT free-  
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior  
ruggedness and fast switching speed.  
(B2RD)  
(LRD)  
G
G
C
• Low Forward Voltage Drop  
• Low Tail Current  
• High Freq. Switching to 20KHz  
• Ultra Low Leakage Current  
C
E
APT50GF60LRD  
E
C
E
• RBSOA and SCSOA Rated  
G
• Ultrafast Soft Recovery Antiparallel Diode  
MAXIMUM RATINGS (IGBT)  
All Ratings: T = 25°C unless otherwise specified.  
C
Symbol Parameter  
APT50GF60B2RD/LRD  
UNIT  
600  
600  
Collector-Emitter Voltage  
VCES  
VCGR  
VGE  
IC1  
Collector-Gate Voltage (RGE = 20K)  
Gate-Emitter Voltage  
Volts  
±20  
Y
80  
50  
Continuous Collector Current @ TC = 25°C  
Continuous Collector Current @ TC = 90°C  
IC2  
Amps  
1
160  
Pulsed Collector Current  
Pulsed Collector Current  
Total Power Dissipation  
@ TC = 25°C  
@ TC = 90°C  
ICM1  
ICM2  
PD  
1
100  
300  
Watts  
Operating and Storage Junction Temperature Range  
-55 to 150  
300  
TJ,TSTG  
TL  
°C  
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS (IGBT)  
Symbol Characteristic / Test Conditions  
MIN  
600  
4.5  
TYP  
MAX  
UNIT  
BVCES  
Collector-Emitter Breakdown Voltage (V = 0V, I = 0.50mA)  
GE C  
PRELIMINAR  
5.5  
2.1  
2.2  
6.5  
2.7  
VGE(TH)  
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)  
Volts  
VCE(ON)  
2.8  
2
0.50  
TBD  
±100  
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)  
ICES  
IGES  
mA  
nA  
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)  
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
EUROPE  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord