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APT200GN60J 参数 Datasheet PDF下载

APT200GN60J图片预览
型号: APT200GN60J
PDF下载: 下载PDF文件 查看货源
内容描述: 综合型栅极电阻:低EMI ,高可靠性 [Intergrated Gate Resistor: Low EMI, High Reliability]
分类和应用: 栅极
文件页数/大小: 6 页 / 202 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
20,000
10,000
C, CAPACITANCE ( F)
5000
C
ies
I
C
, COLLECTOR CURRENT (A)
700
600
500
400
300
200
100
APT200GN60J
P
1000
500
C
0es
C
res
100
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
0.25
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.20
0.9
0.15
0.7
0.5
0.10
0.3
0.05
0.1
0
0.05
10
-5
10
-4
SINGLE PULSE
Note:
PDM
t1
t2
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
50
F
MAX
, OPERATING FREQUENCY (kHz)
Junction
temp. (°C)
0.0536
Power
(watts)
0.169
Case temperature. (°C)
0.353F
0.00826F
10
F
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
max
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
V
= 400V
CE
R = 5Ω
G
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
f
max2
=
P
diss
=
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
75
100 125 150 175 200
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
1
25
50
050-7610
Rev A
1-2005