APT200GN60J 参数 Datasheet PDF下载

TYPICAL PERFORMANCE CURVES

APT200GN60J

APT200GN60J

600V

Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs

have ultra low V

CE(ON)

and are ideal for low frequency applications that require

absolute minimum conduction loss. Easy paralleling is a result of very tight

parameter distribution and a slightly positive V

CE(ON)

temperature coefficient.

A built-in gate resistor ensures extremely reliable operation, even in the event

of a short circuit fault. Low gate charge simplifies gate drive design and

minimizes losses.

•

•

•

•

•

600V Field Stop

Trench Gate: Low V

CE(on)

Easy Paralleling

10µs Short Circuit Capability

Intergrated Gate Resistor: Low EMI, High Reliability

E

G

C

E

7

22

T-

SO

"UL Recognized"

ISOTOP

®

C

G

E

Applications:

welding, inductive heating, solar inverters, motor drives, UPS, pass transistor

MAXIMUM RATINGS

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

All Ratings: T

C

= 25°C unless otherwise specified.

APT200GN60J

UNIT

Volts

600

±20

250

110

600

600A @600V

568

-55 to 150

Amps

@ T

C

= 150°C

Switching Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)CES

V

GE(TH)

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 4mA)

Gate Threshold Voltage

(V

CE

= V

GE

, I

C

= 3.2mA, T

j

= 25°C)

MIN

TYP

MAX

UNIT

600

5

1.05

5.8

1.45

1.65

1.15

1.19

4

2

6.5

1.85

Volts

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 200A, T

j

= 25°C)

V

CE(ON)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 200A, T

j

= 125°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 100A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 100A, T

j

= 125°C)

I

CES

I

GES

R

GINT

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 25°C)

2

mA

nA

Ω

1-2005

050-7610

Rev A

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 125°C)

Gate-Emitter Leakage Current (V

GE

= ±20V)

Intergrated Gate Resistor

TBD

600

2

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com