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APT15GP60BDQ1 参数 Datasheet PDF下载

APT15GP60BDQ1图片预览
型号: APT15GP60BDQ1
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 9 页 / 259 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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APT15GP60BDQ1
60
50
I
F
, FORWARD CURRENT
(A)
t
rr
, REVERSE RECOVERY TIME
(ns)
140
120
30A
100
80
60
40
20
15A
T
J
= 125°C
V
R
= 400V
40
30
20
T
J
= 125°C
10
0
T
J
= 25°C
T
J
= -55°C
0
1
2
3
4
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
Figure 26. Forward Current
vs.
Forward Voltage
T
J
= 150°C
7.5A
0 200 400 600 800 1000 1200 1400 1600
-di
F
/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 27. Reverse Recovery Time
vs.
Current Rate of Change
25
I
RRM
, REVERSE RECOVERY CURRENT
(A)
T
J
= 125°C
V
R
= 400V
0
700
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
600
500
400
300
200
100
0
0
T
J
= 125°C
V
R
= 400V
30A
20
30A
15
15A
10
15A
5
7.5A
7.5A
200 400 600 800 1000 1200 1400 1600
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Charge
vs.
Current Rate of Change
1.2
t
rr
K
f
, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
0 200 400 600 800 1000 1200 1400 1600
-di
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 29. Reverse Recovery Current
vs.
Current Rate of Change
35
30
25
I
F(AV)
(A)
Duty cycle = 0.5
T
J
= 175°C
0
Q
rr
1.0
0.8
0.6
t
rr
0.4
0.2
0.0
Q
rr
I
RRM
20
15
10
5
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 30. Dynamic Parameters
vs.
Junction Temperature
90
80
C
J
, JUNCTION CAPACITANCE
(pF)
0
75
100
125
150
175
Case Temperature (°C)
Figure 31. Maximum Average Forward Current
vs.
CaseTemperature
0
25
50
70
60
50
40
30
20
10
10
100 200
V
R
, REVERSE VOLTAGE (V)
Figure 32. Junction Capacitance
vs.
Reverse Voltage
0
1
050-7449
Rev B
10-2005