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APT15GP60BDQ1 参数 Datasheet PDF下载

APT15GP60BDQ1图片预览
型号: APT15GP60BDQ1
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOS 7 IGBT [POWER MOS 7 IGBT]
分类和应用: 晶体晶体管功率控制瞄准线双极性晶体管局域网
文件页数/大小: 9 页 / 259 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
4,000
I
C
, COLLECTOR CURRENT (A)
70
Cies
60
50
40
30
20
10
0
APT15GP60BDQ1
1,000
C, CAPACITANCE ( F)
500
Coes
100
50
Cres
10
P
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0
0.60
0.50
0.9
0.40
0.7
0.30
0.5
0.3
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
Note:
PDM
t1
t2
0.20
0.10
0
0.1
0.05
10
-5
10
-4
SINGLE PULSE
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
292
Junction
temp. ( ”C)
0.216
Power
(Watts)
0.284
Case temperature
0.164
0.00600
F
MAX
, OPERATING FREQUENCY (kHz)
RC MODEL
100
50
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
15 20 25 30 35 40 45 50
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10
T
J
= 125
°
C
T
C
= 75
°
C
D = 50 %
V
CE
= 400V
R
G
= 5
5
10
F
max
=
min(f
max1
, f
max 2
)
f
max1
=
f
max 2
=
P
diss
=
t
d (on )
0.05
+
t
r
+
t
d(off )
+
t
f
P
diss
P
cond
E
on 2
+
E
off
050-7449
Rev B
T
J
T
C
R
θ
JC
10-2005