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APT100GT60JR 参数 Datasheet PDF下载

APT100GT60JR图片预览
型号: APT100GT60JR
PDF下载: 下载PDF文件 查看货源
内容描述: 迅雷IGBT [Thunderbolt IGBT]
分类和应用: 双极性晶体管
文件页数/大小: 6 页 / 408 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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TYPICAL PERFORMANCE CURVES
10,000
5,000
C, CAPACITANCE ( F)
C
ies
I
C
, COLLECTOR CURRENT (A)
350
300
250
200
150
100
50
APT100GT60JR
P
1,000
500
C
0es
C
res
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
100
0
100 200 300 400 500 600 700
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.9
0.7
0.5
0.3
0.1
0.05
10
-5
10
-4
Note:
PDM
t1
t2
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
100
F
MAX
, OPERATING FREQUENCY (kHz)
50
T = 75
°
C
C
T
J
(°C)
0.0587
Dissipated Power
(Watts)
0.0120
0.420
4.48
0.132
T
C
(°C)
0.0587
10
5
T = 125
°
C
J
D = 50 %
V
= 400V
CE
R = 4.3Ω
G
Z
EXT
T = 100
°
C
C
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
max
F
f
max2
=
P
diss
=
Z
EXT
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
1
10 20
052-6274
Rev A
4-2006