TYPICAL PERFORMANCE CURVES
®
APT100GT60JR
600V
APT100GT60JR
Thunderbolt IGBT
®
The Thunderblot IGBT
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT
®
offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 80KHz
• Ultra Low Leakage Current
E
G
C
E
SO
2
T-
27
ISOTOP
®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 100°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT100GT60JR
UNIT
Volts
600
±30
148
80
300
300A @ 600V
500
-55 to 150
300
Amps
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1.5mA, T
j
= 25°C)
MIN
TYP
MAX
Units
600
3
1.7
4
2.1
2.5
25
2
5
2.5
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 100A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6274
Rev A
I
GES
Gate-Emitter Leakage Current (V
GE
= ±30V)
300
nA
4-2006
I
CES
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
µA
TBD
ADPOW [ ADVANCED POWER TECHNOLOGY ]
