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APT1004RBN 参数 Datasheet PDF下载

APT1004RBN图片预览
型号: APT1004RBN
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 高压高电压电源
文件页数/大小: 4 页 / 55 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT1004RBN的Datasheet PDF文件第1页浏览型号APT1004RBN的Datasheet PDF文件第2页浏览型号APT1004RBN的Datasheet PDF文件第3页  
APT1004R/1004R2BN
60
I
D
, DRAIN CURRENT (AMPERES)
10,000
APT1004RBN
APT1004R2BN
10µS
C, CAPACITANCE (pF)
C iss
1,000
10
OPERATION HERE
LIMITED BY R DS (ON)
APT1004RBN
APT1004R2BN
100µS
1mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
Coss
100
Crss
.11
5 10
50 100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
I = I [Cont.]
D
D
100mS
DC
APT1004R/1004R2BN
0
20
40
50
10
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
50
10
16
VDS=100V
VDS=200V
20
TJ =+150°C
10
5
TJ =+25°C
12
8
VDS=500V
4
2
1
10
30
40
50
20
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0
.5
1.0
1.5
2.0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
050-0011 Rev C
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)