欢迎访问ic37.com |
会员登录 免费注册
发布采购

APT1004RBN 参数 Datasheet PDF下载

APT1004RBN图片预览
型号: APT1004RBN
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 高压高电压电源
文件页数/大小: 4 页 / 55 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
 浏览型号APT1004RBN的Datasheet PDF文件第1页浏览型号APT1004RBN的Datasheet PDF文件第2页浏览型号APT1004RBN的Datasheet PDF文件第4页  
APT1004R/1004R2BN
5
VGS =5.5V,6V &10V
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
4
5V
5
VGS =10V
6V
4
5.5V
5V
3
3
2
4.5V
2
4.5V
1
4V
0
100
200
300
400
500
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
0
1
4V
4
0
8
12
16
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
10
TJ =-55°C
I
D
, DRAIN CURRENT (AMPERES)
8
V
> I (ON) x R
(ON)MAX.
DS D
DS
230µ SEC. PULSE TEST
2.5
T = 25°C
J
TJ =+25°C
TJ =+125°C
2µ SEC. PULSE TEST
NORMALIZED TO
2.0
V
GS
= 10V @ 0.5 I [Cont.]
D
6
1.5
VGS =10V
VGS =20V
4
1.0
2
TJ =+125°C
TJ =+25°C
TJ =-55°C
0.5
0
2
4
6
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
5
I
D
, DRAIN CURRENT (AMPERES)
0
0.0
0
8
2
4
6
10
12
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
4
APT1004RRBN
1.1
3
1.0
APT1004R2BN
2
0.9
1
0.8
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
I = 0.5 I [Cont.]
D
D
0
25
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.4
0.7
-50
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6
050-0011 Rev C
0.0
-50
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4
-50 -25