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APT1004R2KN 参数 Datasheet PDF下载

APT1004R2KN图片预览
型号: APT1004R2KN
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型高压功率MOSFET [N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS]
分类和应用: 晶体晶体管功率场效应晶体管脉冲高压局域网高电压电源
文件页数/大小: 4 页 / 55 K
品牌: ADPOW [ ADVANCED POWER TECHNOLOGY ]
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DYNAMIC CHARACTERISTICS
Symbol Characteristic
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT1004R/1004R2KN
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
MIN
TYP
MAX
UNIT
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
805
115
37
35
950
160
60
55
6.5
27
20
18
48
46
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
GS
= 10V, I
D
= I
D
[Cont.]
V
DD
= 0.5 V
DSS
4.3
18
10
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.], V
GS
= 15V
R
G
= 1.8Ω
9
32
23
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
APT1004RKN
I
S
I
SM
V
SD
t
rr
MIN
TYP
MAX
UNIT
3.6
3.5
14.4
14.0
1.3
150
0.8
290
1.65
580
3.3
Amps
Amps
Amps
Amps
Volts
ns
µC
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
1
APT1004R2KN
APT1004RKN
APT1004R2KN
(Body Diode)
(V
GS
= 0V, I
S
= -I
D
[Cont.])
2
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/µs)
Reverse Recovery Charge
Q
rr
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
SOA1
SOA2
I
LM
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
Test Conditions / Part Number
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.],
MIN
TYP
MAX
UNIT
Watts
Watts
Amps
Amps
125
125
14.4
14.0
V
D
S
= P
D
/ I
D
[Cont.], t = 1 Sec.
APT1004RKN
APT1004R2KN
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
µS,
Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
, THERMAL IMPEDANCE (°C/W)
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.01
SINGLE PULSE
Note:
PDM
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-0036 Rev C
Z
θ
JC
0.004
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4