D
TO-220
G
S
APT1004RKN
APT1004R2KN
1000V 3.6A 4.00
Ω
1000V 3.5A 4.20
Ω
POWER MOS IV
®
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter
V
DSS
I
D
I
DM
V
GS
P
D
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C, Derate Above 25°C
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT1004R2KN
1000
3.5
14.0
±30
125
-55 to 150
APT1004RKN
1000
3.6
14.4
UNIT
Volts
Amps
Amps
Volts
Watts
°C
T
J
,T
STG
Operating and Storage Junction Temperature Range
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
BV
DSS
I
DSS
I
GSS
I
D
(ON)
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
=
±30V,
V
DS
= 0V)
On State Drain Current
2
MIN
APT1004RKN
APT1004R2KN
TYP
MAX
UNIT
Volts
Volts
1000
1000
250
1000
±100
µA
nA
Amps
Amps
APT1004RKN
APT1004R2KN
3.6
3.5
2
4
4.00
4.20
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
2
V
GS
(TH) Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
R
DS
(ON)
Static Drain-Source On-State Resistance
(V
GS
= 10V, I
D
= 0.5 I
D
[Cont.])
APT1004RKN
APT1004R2KN
Volts
Ohms
Ohms
THERMAL CHARACTERISTICS
Symbol Characteristic
R
θJC
R
θJA
T
L
Junction to Case
Junction to Ambient
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
MIN
TYP
MAX
UNIT
°C/W
°C/W
°C
1.00
80
300
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-0036 Rev C
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
ADPOW [ ADVANCED POWER TECHNOLOGY ]
